Investigation of strain relaxation of Ge 1-x Si x epilayers on Ge (001) by high-resolution x-ray ...

@article{197249,
   author = {Li, J.H. and Holý, Václav},
   article_location = {UK},
   article_number = {-},
   language = {eng},
   issn = {0268-1242},
   journal = {Semicond. Sci. Technol.},
   title = {Investigation of strain relaxation of Ge 1-x Si x epilayers on Ge (001) by high-resolution x-ray reciprocal space mapping},
   volume = {10},
   year = {1995}
}

TY  - JOUR
ID  - 197249
AU  - Li, J.H. - Holý, Václav
PY  - 1995
TI  - Investigation of strain relaxation of Ge 1-x Si x epilayers on Ge (001) by high-resolution x-ray reciprocal space mapping
JF  - Semicond. Sci. Technol.
VL  - 10
IS  - -
SP  - 1621
EP  - 1621
PB  - Publishing Ltd
SN  - 02681242
ER  - 

LI, J.H. a Václav HOLÝ. Investigation of strain relaxation of Ge 1-x Si x epilayers on Ge (001) by high-resolution x-ray reciprocal space mapping. \textit{Semicond. Sci. Technol.}. UK: Publishing Ltd, 1995, roč.~10, -, s.~1621-1628. ISSN~0268-1242.