| MUNZAR, Dominik, E. DOBROČKA, I. VÁVRA, R. KÚDELA, M. HARVANKA a N.E. CHRISTENSEN. Antiphasing mechanism of ordered Ga 0.5 In 0.5 P layers grown on GaAs (001). Physical Review B. USA: The American Physical Society, 1998, roč. 57(1998), č. 8, s. 4642-4648. ISSN 0163-1829. |
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@article{200310,
author = {Munzar, Dominik and Dobročka, E. and Vávra, I. and Kúdela, R. and Harvanka, M. and Christensen, N.E.},
article_location = {USA},
article_number = {8},
language = {eng},
issn = {0163-1829},
journal = {Physical Review B},
title = {Antiphasing mechanism of ordered Ga 0.5 In 0.5 P layers grown on GaAs (001)},
volume = {57(1998)},
year = {1998}
}
TY - JOUR
ID - 200310
AU - Munzar, Dominik - Dobročka, E. - Vávra, I. - Kúdela, R. - Harvanka, M. - Christensen, N.E.
PY - 1998
TI - Antiphasing mechanism of ordered Ga 0.5 In 0.5 P layers grown on GaAs (001)
JF - Physical Review B
VL - 57(1998)
IS - 8
SP - 4642
EP - 4642
PB - The American Physical Society
SN - 01631829
ER -
MUNZAR, Dominik, E. DOBROČKA, I. VÁVRA, R. KÚDELA, M. HARVANKA a N.E. CHRISTENSEN. Antiphasing mechanism of ordered Ga 0.5 In 0.5 P layers grown on GaAs (001). \textit{Physical Review B}. USA: The American Physical Society, 1998, roč.~57(1998), č.~8, s.~4642-4648. ISSN~0163-1829.
|
