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@article{485811,
author = {Holý, Václav},
article_location = {USA},
article_number = {3},
keywords = {Influence of GaN domain size on the electron mobility of two-dimensional electron gases in Al-GaN/GaN heterostructures determined by x-ray reflectivity and diffraction; Appl. Phys. Lett. 80; 3521-3523 (2002).},
language = {eng},
issn = {0003-6951},
journal = {Appl. Phys. Lett.},
title = {Influence of GaN domain size on the electron mobility of two-dimensional electron gases in Al-GaN/GaN heterostructures determined by x-ray reflectivity and diffraction},
volume = {80},
year = {2002}
}
TY - JOUR
ID - 485811
AU - Holý, Václav
PY - 2002
TI - Influence of GaN domain size on the electron mobility of two-dimensional electron gases in Al-GaN/GaN heterostructures determined by x-ray reflectivity and diffraction
JF - Appl. Phys. Lett.
VL - 80
IS - 3
SP - 3521-3523
EP - 3521-3523
PB - Institute of Physics
SN - 00036951
KW - Influence of GaN domain size on the electron mobility of two-dimensional electron gases in Al-GaN/GaN heterostructures determined by x-ray reflectivity and diffraction
KW - Appl. Phys. Lett. 80
KW - 3521-3523 (2002).
N2 - Influence of GaN domain size on the electron mobility of two-dimensional electron gases in Al-GaN/GaN heterostructures determined by x-ray reflectivity and diffraction
ER -
HOLÝ, Václav. Influence of GaN domain size on the electron mobility of two-dimensional electron gases in Al-GaN/GaN heterostructures determined by x-ray reflectivity and diffraction. \textit{Appl. Phys. Lett.}. USA: Institute of Physics, 2002, roč.~80, č.~3, s.~3521-3523. ISSN~0003-6951.
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