HESSE, Anke, Julian STANGL a Václav HOLÝ. Effect of overgrowth on shape, composition, and strain of SiGe islands on Si(001). Physical Review B. USA: The American Physical Society, 2002, B66, č. 5, s. 085321-085333. ISSN 0163-1829. |
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@article{485818, author = {Hesse, Anke and Stangl, Julian and Holý, Václav}, article_location = {USA}, article_number = {5}, keywords = {Effect of overgrowth on shape; composition; and strain of SiGe islands on Si(001)}, language = {eng}, issn = {0163-1829}, journal = {Physical Review B}, title = {Effect of overgrowth on shape, composition, and strain of SiGe islands on Si(001)}, volume = {B66}, year = {2002} }
TY - JOUR ID - 485818 AU - Hesse, Anke - Stangl, Julian - Holý, Václav PY - 2002 TI - Effect of overgrowth on shape, composition, and strain of SiGe islands on Si(001) JF - Physical Review B VL - B66 IS - 5 SP - 085321-085333 EP - 085321-085333 PB - The American Physical Society SN - 01631829 KW - Effect of overgrowth on shape KW - composition KW - and strain of SiGe islands on Si(001) N2 - Effect of overgrowth on shape, composition, and strain of SiGe islands on Si(001) ER -
HESSE, Anke, Julian STANGL a Václav HOLÝ. Effect of overgrowth on shape, composition, and strain of SiGe islands on Si(001). \textit{Physical Review B}. USA: The American Physical Society, 2002, B66, č.~5, s.~085321-085333. ISSN~0163-1829.
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