X-ray diffuse scattering from stacking faults in Czochralski silicon

@article{630434,
   author = {Klang, Pavel and Holý, Václav},
   article_location = {Velká Britanie},
   article_number = {3},
   keywords = {High resolution X-ray diffraction; Defects; Czochralski method; Semiconducting silicon},
   language = {eng},
   issn = {0268-1242},
   journal = {Semicond. Sci. Technol.},
   title = {X-ray diffuse scattering from stacking faults in Czochralski silicon},
   volume = {21},
   year = {2006}
}

TY  - JOUR
ID  - 630434
AU  - Klang, Pavel - Holý, Václav
PY  - 2006
TI  - X-ray diffuse scattering from stacking faults in Czochralski silicon
JF  - Semicond. Sci. Technol.
VL  - 21
IS  - 3
SP  - 352-357
EP  - 352-357
PB  - IOP Publishing Ltd
SN  - 02681242
KW  - High resolution X-ray diffraction
KW  - Defects
KW  - Czochralski method
KW  - Semiconducting silicon
N2  - High resolution x-ray diffraction has been used to measure the reciprocal space maps of intensity distribution from the scattering on defects in silicon wafers after annealing processes. The displacement field around stacking faults and dislocation loops has been calculated using the Burgers theory of elasticity. From these calculations a reciprocal space map of x-ray diffuse scattered intensity has been simulated. The type and size of the defects can be determined from a comparison of measured with simulated maps. The type of defects has been determined from the symmetry of measured reciprocal space maps, where higher intensity streaks corresponding to planar defects in {1 1 1} planes have been observed. Using the width of these higher intensity streaks and comparing measured and simulated maps, the radius of stacking faults with the Burgers vector a/3[1 1 1] in {1 1 1} planes was found to be 0.3-0.5 micrometers.
ER  - 

KLANG, Pavel a Václav HOLÝ. X-ray diffuse scattering from stacking faults in Czochralski silicon. \textit{Semicond. Sci. Technol.}. Velká Britanie: IOP Publishing Ltd, 2006, roč.~21, č.~3, s.~352-357. ISSN~0268-1242.