Strain relaxation in high electron mobility Si 1-x Ge x/Si structures

@article{197815,
   author = {Li, J.H. and Holý, Václav},
   article_number = {15},
   language = {eng},
   issn = {0021-8979},
   journal = {J. Appl. Phys.},
   title = {Strain relaxation in high electron mobility Si 1-x Ge x/Si structures},
   volume = {(82)1997},
   year = {1997}
}

TY  - JOUR
ID  - 197815
AU  - Li, J.H. - Holý, Václav
PY  - 1997
TI  - Strain relaxation in high electron mobility Si 1-x Ge x/Si structures
JF  - J. Appl. Phys.
VL  - (82)1997
IS  - 15
SP  - 2881
EP  - 2881
SN  - 00218979
ER  - 

LI, J.H. a Václav HOLÝ. Strain relaxation in high electron mobility Si 1-x Ge x/Si structures. \textit{J. Appl. Phys.}. 1997, (82)1997, č.~15, s.~2881-2966. ISSN~0021-8979.