Reciprocal space mapping on Si 1-x C x epilayers and Si n/C/Si n superlattices

@article{197823,
   author = {Stangl, J. and Holý, Václav},
   article_location = {Amsterdam},
   article_number = {2-4},
   language = {eng},
   issn = {0022-0248},
   journal = {Journal of crystal growth},
   title = {Reciprocal space mapping on Si 1-x C x epilayers and Si n/C/Si n superlattices},
   volume = {(19)1997},
   year = {1997}
}

TY  - JOUR
ID  - 197823
AU  - Stangl, J. - Holý, Václav
PY  - 1997
TI  - Reciprocal space mapping on Si 1-x C x epilayers and Si n/C/Si n superlattices
JF  - Journal of crystal growth
VL  - (19)1997
IS  - 2-4
SP  - 355
EP  - 355
PB  - Elsevier Science
SN  - 00220248
ER  - 

STANGL, J. a Václav HOLÝ. Reciprocal space mapping on Si 1-x C x epilayers and Si n/C/Si n superlattices. \textit{Journal of crystal growth}. Amsterdam: Elsevier Science, 1997, (19)1997, 2-4, s.~355-360. ISSN~0022-0248.