Strain relaxation and surface morphology of compositionally graded Si/SiGe buffers

@article{200589,
   author = {Li, J.H. and Springholz, G. and Stangl, G. and Seyringer, H. and Holý, Václav and Schaffler, F. and Bauer, G.},
   article_number = {B16},
   language = {eng},
   journal = {J. Vac. Sci & Technol.},
   title = {Strain relaxation and surface morphology of compositionally graded Si/SiGe buffers},
   volume = {1998},
   year = {1998}
}

TY  - JOUR
ID  - 200589
AU  - Li, J.H. - Springholz, G. - Stangl, G. - Seyringer, H. - Holý, Václav - Schaffler, F. - Bauer, G.
PY  - 1998
TI  - Strain relaxation and surface morphology of compositionally graded Si/SiGe buffers
JF  - J. Vac. Sci & Technol.
VL  - 1998
IS  - B16
SP  - 1610
EP  - 1610
ER  - 

LI, J.H., G. SPRINGHOLZ, G. STANGL, H. SEYRINGER, Václav HOLÝ, F. SCHAFFLER a G. BAUER. Strain relaxation and surface morphology of compositionally graded Si/SiGe buffers. \textit{J. Vac. Sci \&{} Technol.}. 1998, roč.~1998, B16, s.~1610-1615.