High-resolution x-ray diffraction on self-organized step bunches of Si_1-xGe_x ...

@article{205370,
   author = {Stangl, J. and Holý, Václav and Darhuber, A.A. and Mikulík, Petr and Bauer, G. and Zhu, J. and Brunner, K. and Abstreiter, G.},
   article_location = {Velká Britanie},
   article_number = {9999},
   language = {eng},
   issn = {0022-3727},
   journal = {J. Phys. D: Appl. Phys.},
   title = {High-resolution x-ray diffraction on self-organized step bunches of Si_1-xGe_x grown on (113)-oriented Si},
   volume = {32},
   year = {1999}
}

TY  - JOUR
ID  - 205370
AU  - Stangl, J. - Holý, Václav - Darhuber, A.A. - Mikulík, Petr - Bauer, G. - Zhu, J. - Brunner, K. - Abstreiter, G.
PY  - 1999
TI  - High-resolution x-ray diffraction on self-organized step bunches of Si_1-xGe_x grown on (113)-oriented Si
JF  - J. Phys. D: Appl. Phys.
VL  - 32
IS  - 9999
SP  - A71
EP  - A71
PB  - IOP Publishing LTd
SN  - 00223727
N2  - We present investigations of a highly regular terraced surface and interface structure of Si/SiGe multilayers on Si(113) by x-ray diffraction, x-ray reflectivity and atomic force microscopy. A regular array of step bunches with lateral periods of several hundred nanometres is formed during the growth of the Si/Si1-xGex multilayers. X-ray diffraction patterns are simulated using the elastic Green function approach for the evaluation of the strain fields associated with the step edges, taking into account the relaxation towards the free surface. In addition to the terrace structure, a surface waviness on the micrometer length scale is present, leading to a modulation of the terrace widths.
ER  - 

STANGL, J., Václav HOLÝ, A.A. DARHUBER, Petr MIKULÍK, G. BAUER, J. ZHU, K. BRUNNER a G. ABSTREITER. High-resolution x-ray diffraction on self-organized step bunches of Si$<$sub$>$1-x$<$/sub$>$Ge$<$sub$>$x$<$/sub$>$ grown on (113)-oriented Si. \textit{J. Phys. D: Appl. Phys.}. Velká Britanie: IOP Publishing LTd, 1999, roč.~32, č.~9999, s.~A71, 4 s. ISSN~0022-3727.