| STANGL, J., A. DANIEL a V. HOLY. Strain and composition distribution in uncapped SiGe islands from x-ray diffraction. Applied Physics Letters. USA: American Institute of Physics, 2001, roč. 79, č. 10, s. 1474-1476. ISSN 0003-6951. |
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@article{385236,
author = {Stangl, J. and Daniel, A. and Holy, V.},
article_location = {USA},
article_number = {10},
language = {eng},
issn = {0003-6951},
journal = {Applied Physics Letters},
title = {Strain and composition distribution in uncapped SiGe islands from x-ray diffraction},
volume = {79},
year = {2001}
}
TY - JOUR
ID - 385236
AU - Stangl, J. - Daniel, A. - Holy, V.
PY - 2001
TI - Strain and composition distribution in uncapped SiGe islands from x-ray diffraction
JF - Applied Physics Letters
VL - 79
IS - 10
SP - 1474
EP - 1474
PB - American Institute of Physics
SN - 00036951
N2 - Strain and composition distribution in uncapped SiGe islands from x-ray diffraction
ER -
STANGL, J., A. DANIEL a V. HOLY. Strain and composition distribution in uncapped SiGe islands from x-ray diffraction. \textit{Applied Physics Letters}. USA: American Institute of Physics, 2001, roč.~79, č.~10, s.~1474-1476. ISSN~0003-6951.
|
