GID study of strains in Si due to patterned SiO2

@article{385295,
   author = {Daniel, A. and Holý, Václav and Bauer, G.},
   article_location = {Velká Britanie},
   article_number = {10A},
   language = {eng},
   issn = {0022-3727},
   journal = {J. Phys.D.: Appl. Phys.},
   title = {GID study of strains in Si due to patterned SiO2},
   volume = {34},
   year = {2001}
}

TY  - JOUR
ID  - 385295
AU  - Daniel, A. - Holý, Václav - Bauer, G.
PY  - 2001
TI  - GID study of strains in Si due to patterned SiO2
JF  - J. Phys.D.: Appl. Phys.
VL  - 34
IS  - 10A
SP  - 197
EP  - 197
PB  - IOP Publishing Ltd
SN  - 00223727
N2  - GID study of strains in Si due to patterned SiO2
ER  - 

DANIEL, A., Václav HOLÝ a G. BAUER. GID study of strains in Si due to patterned SiO2. \textit{J. Phys.D.: Appl. Phys.}. Velká Britanie: IOP Publishing Ltd, 2001, roč.~34, 10A, s.~197-202. ISSN~0022-3727.