Polarization anisotropy of photoluminescence from multilayer InAs/GaAs quantum dots

@article{405942,
   author = {Humlíček, Josef and Munzar, Dominik and Navrátil, Karel and Lorenc, Michal and Oswald, Jiří and Pangrác, Jiří and Hulicius, Eduard},
   article_location = {Amsterdam},
   article_number = {2},
   keywords = {self-assembled quantum dots; photoluminescence; polarization anisotropy},
   language = {eng},
   issn = {1386-9477},
   journal = {Physica E},
   title = {Polarization anisotropy of photoluminescence from multilayer InAs/GaAs quantum dots},
   volume = {13},
   year = {2002}
}

TY  - JOUR
ID  - 405942
AU  - Humlíček, Josef - Munzar, Dominik - Navrátil, Karel - Lorenc, Michal - Oswald, Jiří - Pangrác, Jiří - Hulicius, Eduard
PY  - 2002
TI  - Polarization anisotropy of photoluminescence from multilayer InAs/GaAs quantum dots
JF  - Physica E
VL  - 13
IS  - 2
SP  - 229
EP  - 229
PB  - Elsevier Science
SN  - 13869477
KW  - self-assembled quantum dots
KW  - photoluminescence
KW  - polarization anisotropy
N2  - We present results of our study of photoluminescence (PL) from multilayer InAs/GaAs quantum dot structures grown by metal organic vapor-phase epitaxy and discuss them in terms of the envelope function approximation. The intensity of the component of the PL signal polarized in the plane parallel to the substrate is substantially higher than that corresponding to the perpendicular polarization. In addition, the former depends on the angle between the electric vector and the direction of elongation of the dots.
ER  - 

HUMLÍČEK, Josef, Dominik MUNZAR, Karel NAVRÁTIL a Michal LORENC. Polarization anisotropy of photoluminescence from multilayer InAs/GaAs quantum dots. \textit{Physica E}. Amsterdam: Elsevier Science, 2002, roč.~13, č.~2, s.~229-232. ISSN~1386-9477.