| HESSE, Anke, Julian STANGL a Václav HOLÝ. Effect of overgrowth on shape, composition, and strain of SiGe islands on Si(001). Physical Review B. USA: The American Physical Society, 2002, B66, č. 5, s. 085321-085333. ISSN 0163-1829. |
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@article{485818,
author = {Hesse, Anke and Stangl, Julian and Holý, Václav},
article_location = {USA},
article_number = {5},
keywords = {Effect of overgrowth on shape; composition; and strain of SiGe islands on Si(001)},
language = {eng},
issn = {0163-1829},
journal = {Physical Review B},
title = {Effect of overgrowth on shape, composition, and strain of SiGe islands on Si(001)},
volume = {B66},
year = {2002}
}
TY - JOUR
ID - 485818
AU - Hesse, Anke - Stangl, Julian - Holý, Václav
PY - 2002
TI - Effect of overgrowth on shape, composition, and strain of SiGe islands on Si(001)
JF - Physical Review B
VL - B66
IS - 5
SP - 085321-085333
EP - 085321-085333
PB - The American Physical Society
SN - 01631829
KW - Effect of overgrowth on shape
KW - composition
KW - and strain of SiGe islands on Si(001)
N2 - Effect of overgrowth on shape, composition, and strain of SiGe islands on Si(001)
ER -
HESSE, Anke, Julian STANGL a Václav HOLÝ. Effect of overgrowth on shape, composition, and strain of SiGe islands on Si(001). \textit{Physical Review B}. USA: The American Physical Society, 2002, B66, č.~5, s.~085321-085333. ISSN~0163-1829.
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