Nitrogen in Czochralski-grown silicon

@inproceedings{488314,
   author = {Šik, Jan and Lorenc, Michal and Štoudek, Richard},
   address = {Neuveden},
   booktitle = {SILICON 2002, Rožnov pod Radhostěm, TECON Scientific, editor K. Vojtěchovský},
   keywords = {silicon; nitrogen},
   language = {eng},
   location = {Neuveden},
   pages = {125-128},
   publisher = {Neuveden},
   title = {Nitrogen in Czochralski-grown silicon},
   year = {2002}
}

TY  - JOUR
ID  - 488314
AU  - Šik, Jan - Lorenc, Michal - Štoudek, Richard
PY  - 2002
TI  - Nitrogen in Czochralski-grown silicon
PB  - Neuveden
CY  - Neuveden
KW  - silicon
KW  - nitrogen
N2  - Fourier transform infrared spectroscopy (FTIR) and secondary ion mass spectroscopy (SIMS) are used to study nitrogen-doped Czochralski-grown (CZ) crystal. We observe nitrogen-related vibrational modes typical for CZ silicon and estimate nitrogen content to be 1.6x10^15 cm-3 from its quantitative analysis. This value is in a good agreement with result of 2.4x10^15 cm-3 from calculations assuming constant segregation coefficient 7x10^(-4). On the other hand, SIMS measurements give much higher value of 8.3x10^15 cm-3. Only 4-5% of nitrogen occupy substitutional sites. We also observe an obstruction of dislocation movement during crystal cooling.
ER  - 

ŠIK, Jan, Michal LORENC a Richard ŠTOUDEK. Nitrogen in Czochralski-grown silicon. In \textit{SILICON 2002, Rožnov pod Radhostěm, TECON Scientific, editor K. Vojtěchovský}. Neuveden: Neuveden, 2002, s.~125-128.