Infrared Absorption Spectroscopy of Oxygen Precipitates in Czochralski Silicon

@inproceedings{566412,
   author = {Štoudek, Richard and Humlíček, Josef},
   address = {Praha, Česká republika},
   booktitle = {WDS'04 Proceedings of Contributed Papers},
   keywords = {Infrared; Silicon; Oxygen; Precipitates},
   language = {eng},
   location = {Praha, Česká republika},
   isbn = {80-86732-32-0},
   pages = {475-479},
   publisher = {MATFYZPRESS},
   title = {Infrared Absorption Spectroscopy of Oxygen Precipitates in Czochralski Silicon},
   year = {2004}
}

TY  - JOUR
ID  - 566412
AU  - Štoudek, Richard - Humlíček, Josef
PY  - 2004
TI  - Infrared Absorption Spectroscopy of Oxygen Precipitates in Czochralski Silicon
PB  - MATFYZPRESS
CY  - Praha, Česká republika
SN  - 8086732320
KW  - Infrared
KW  - Silicon
KW  - Oxygen
KW  - Precipitates
N2  - We have analysed infrared transmittance spectra of Czochralski silicon. Using measurements at liquid nitrogen temperature we have identified the contribution of oxygen precipitates. The continuum theory of average dielectric constant has been used to determine the shape and volume fraction of these particles.
ER  - 

ŠTOUDEK, Richard a Josef HUMLÍČEK. Infrared Absorption Spectroscopy of Oxygen Precipitates in Czochralski Silicon. In \textit{WDS'04 Proceedings of Contributed Papers}. Praha, Česká republika: MATFYZPRESS, 2004, s.~475-479, 4 s. ISBN~80-86732-32-0.