| ŠTOUDEK, Richard, Michal LORENC a Josef HUMLÍČEK. Infrared Absorption Spectroscopy of Oxygen Precipitates in Nitrogen-doped Czochralski Silicon. In Proceedings of The Ninth Scientific and Business Conference SILICON 2004. Rožnov pod Radhoštěm, Česká republika: TECON Scientific, s.r.o., 2004, s. 146-150. |
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@inproceedings{566428,
author = {Štoudek, Richard and Lorenc, Michal and Humlíček, Josef},
address = {Rožnov pod Radhoštěm, Česká republika},
booktitle = {Proceedings of The Ninth Scientific and Business Conference SILICON 2004},
keywords = {Infrared; Silicon; Oxygen; Precipitates; Nitrogen doping},
language = {eng},
location = {Rožnov pod Radhoštěm, Česká republika},
pages = {146-150},
publisher = {TECON Scientific, s.r.o.},
title = {Infrared Absorption Spectroscopy of Oxygen Precipitates in Nitrogen-doped Czochralski Silicon},
year = {2004}
}
TY - JOUR
ID - 566428
AU - Štoudek, Richard - Lorenc, Michal - Humlíček, Josef
PY - 2004
TI - Infrared Absorption Spectroscopy of Oxygen Precipitates in Nitrogen-doped Czochralski Silicon
PB - TECON Scientific, s.r.o.
CY - Rožnov pod Radhoštěm, Česká republika
KW - Infrared
KW - Silicon
KW - Oxygen
KW - Precipitates
KW - Nitrogen doping
N2 - We have analysed infrared transmittance spectra of Czochralski silicon. Using measurements at liquid nitrogen temperature we have identified the contribution of oxygen precipitates of different shapes. An effective-medium model of average dielectric constant has been used to determine the shape, volume fraction and stoichiometry of the precipitates. Standard and nitrogen-doped samples have been measured; we have observed a favourable influence of nitrogen on oxygen precipitation.
ER -
ŠTOUDEK, Richard, Michal LORENC a Josef HUMLÍČEK. Infrared Absorption Spectroscopy of Oxygen Precipitates in Nitrogen-doped Czochralski Silicon. In \textit{Proceedings of The Ninth Scientific and Business Conference SILICON 2004}. Rožnov pod Radhoštěm, Česká republika: TECON Scientific, s.r.o., 2004, s.~146-150.
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