Nucleation and Precipitation of Interstitial Oxygen in Czochralski Silicon

@inproceedings{701562,
   author = {Štoudek, Richard and Klang, Pavel and Kuběna, Alan and Kuběna, Josef},
   address = {Rožnov pod Radhoštěm, Česká republika},
   booktitle = {Proceedings of The Tenth Scientific and Business Conference SILICON 2006},
   keywords = {Nucleation; Precipitation; Interstitial oxygen; Silicon; Infrared absorption},
   language = {eng},
   location = {Rožnov pod Radhoštěm, Česká republika},
   isbn = {80-239-7781-4},
   pages = {283-284},
   publisher = {TECON Scientific, s.r.o.},
   title = {Nucleation and Precipitation of Interstitial Oxygen in Czochralski Silicon},
   year = {2006}
}

TY  - JOUR
ID  - 701562
AU  - Štoudek, Richard - Klang, Pavel - Kuběna, Alan - Kuběna, Josef
PY  - 2006
TI  - Nucleation and Precipitation of Interstitial Oxygen in Czochralski Silicon
PB  - TECON Scientific, s.r.o.
CY  - Rožnov pod Radhoštěm, Česká republika
SN  - 8023977814
KW  - Nucleation
KW  - Precipitation
KW  - Interstitial oxygen
KW  - Silicon
KW  - Infrared absorption
N2  - Infrared absorption spectroscopy has been applied to study interstitial oxygen (Oi) and oxygen precipitates in a series of multi-step annealed silicon samples. We have adopted Ham's theory of diffusion-limited precipitation. Then we have been able to determine concentration of the oxygen precipitates in the samples from decrease of Oi concentration during the high temperature annealing. We have also used triple-axis high-resolution x-ray diffraction to measure reciprocal space maps of these samples.
ER  - 

ŠTOUDEK, Richard, Pavel KLANG, Alan KUBĚNA a Josef KUBĚNA. Nucleation and Precipitation of Interstitial Oxygen in Czochralski Silicon. In \textit{Proceedings of The Tenth Scientific and Business Conference SILICON 2006}. Rožnov pod Radhoštěm, Česká republika: TECON Scientific, s.r.o., 2006, s.~283-284. ISBN~80-239-7781-4.