HESSE, Anke, Julian STANGL and Václav HOLÝ. Effect of overgrowth on shape, composition, and strain of SiGe islands on Si(001). Physical Review B. USA: The American Physical Society, 2002, B66, No 5, p. 085321-085333. ISSN 0163-1829.
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Basic information
Original name Effect of overgrowth on shape, composition, and strain of SiGe islands on Si(001)
Authors HESSE, Anke (276 Germany), Julian STANGL (40 Austria) and Václav HOLÝ (203 Czech Republic, guarantor).
Edition Physical Review B, USA, The American Physical Society, 2002, 0163-1829.
Other information
Original language English
Type of outcome Article in a journal
Field of Study 10302 Condensed matter physics
Country of publisher United States of America
Confidentiality degree is not subject to a state or trade secret
Impact factor Impact factor: 3.070 in 2001
RIV identification code RIV/00216224:14310/02:00007674
Organization unit Faculty of Science
UT WoS 000177972500079
Keywords in English Effect of overgrowth on shape; composition; and strain of SiGe islands on Si(001)
Tags composition
Changed by Changed by: prof. RNDr. Václav Holý, CSc., učo 1656. Changed: 12/2/2007 14:17.
Abstract
Effect of overgrowth on shape, composition, and strain of SiGe islands on Si(001)
Links
GA202/00/0354, research and development projectName: Procesy samouspořádání rozhraní při epitaxním růstu polovodičových supermřížek
Investor: Czech Science Foundation, Self-organization processes on the interfaces during epitaxial growth of semiconductor superlattices
MSM 143100002, plan (intention)Name: Fyzikální vlastnosti nových materiálů a vrstevnatých struktur
Investor: Ministry of Education, Youth and Sports of the CR, Physical properties of new materials and layered structures
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