HOLÝ, Václav. Effect of overgrowth temperature on shape, strain, and composition of buried Ge islands deduced from x-ray diffraction. Applied Physics Letters. USA: American Institute of Physics, 2003, vol. 82, No 11, p. 2251-2253. ISSN 0003-6951.
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Basic information
Original name Effect of overgrowth temperature on shape, strain, and composition of buried Ge islands deduced from x-ray diffraction
Authors HOLÝ, Václav (203 Czech Republic, guarantor).
Edition Applied Physics Letters, USA, American Institute of Physics, 2003, 0003-6951.
Other information
Original language English
Type of outcome Article in a journal
Field of Study 10302 Condensed matter physics
Country of publisher United States of America
Confidentiality degree is not subject to a state or trade secret
Impact factor Impact factor: 4.049
RIV identification code RIV/00216224:14310/03:00008491
Organization unit Faculty of Science
UT WoS 000182018800019
Keywords in English Effect of overgrowth temperature on shape; strain; and composition of buried Ge islands deduced from x-ray diffraction
Tags STRAIN
Changed by Changed by: prof. RNDr. Václav Holý, CSc., učo 1656. Changed: 12/2/2007 14:17.
Abstract
Effect of overgrowth temperature on shape, strain, and composition of buried Ge islands deduced from x-ray diffraction
Links
GA202/03/0148, research and development projectName: Anomální rozptyl rtg záření na polovodičových nanostrukturách
Investor: Czech Science Foundation, Anomalous x-ray scattering from semiconductor nanostructures
MSM 143100002, plan (intention)Name: Fyzikální vlastnosti nových materiálů a vrstevnatých struktur
Investor: Ministry of Education, Youth and Sports of the CR, Physical properties of new materials and layered structures
PrintDisplayed: 23/5/2024 08:18