F9800 Condensed matter physics I

Faculty of Science
Spring 2021
Extent and Intensity
3/1/0. 4 credit(s) (plus extra credits for completion). Type of Completion: zk (examination).
Teacher(s)
prof. RNDr. Josef Humlíček, CSc. (lecturer)
Dominique Alain Geffroy, Ph.D. (seminar tutor)
Guaranteed by
prof. RNDr. Josef Humlíček, CSc.
Department of Condensed Matter Physics - Physics Section - Faculty of Science
Contact Person: prof. Mgr. Dominik Munzar, Dr.
Supplier department: Department of Condensed Matter Physics - Physics Section - Faculty of Science
Prerequisites
F8800
Course Enrolment Limitations
The course is also offered to the students of the fields other than those the course is directly associated with.
fields of study / plans the course is directly associated with
Course objectives
After passing the course, students will gain the basic orientation in semiconductors; in particular, crystal structures, band structures, relations between lattice parameters and gaps. They will understand the properties of elementary and compound semiconductors and their alloys. Students will be oriented in lattice vibrations, optical and Raman spectra, inelastic neutron scattering, and localized vibrations. They will be acquainted in detail with bandstructures of several classes of semiconductors (Si, Ge, SiGe, GaAs, AlAs, III-V, II-VI), with the extrema of valence and conduction bands and their behaviour in cyclotron resonance. They will understand shallow impurity states and surface states, transport phenomena in intrinsic and homogeneously doped materials, in structures with inhomogeneous doping and heterostructures, and transport in magnetic field. They will get an overview of the current research in magnetic semiconductors.
Learning outcomes
Students -know basic facts about crystal structures, band structures, relations between lattice parameters and gaps. -understand the properties of elementary and compound semiconductors and their alloys. - know about lattice vibrations, optical and Raman spectra, inelastic neutron scattering, and localized vibrations. - understand in detail with bandstructures of several classes of semiconductors (Si, Ge, SiGe, GaAs, AlAs, III-V, II-VI), with the extrema of valence and conduction bands and their behaviour in cyclotron resonance. -understand shallow impurity states and surface states, transport phenomena in intrinsic and homogeneously doped materials, in structures with inhomogeneous doping and heterostructures, and transport in magnetic field.
Syllabus
  • Semiconductors: crystal structure, band structure, lattice parameters and gaps. Elemental and compoud semiconductors, alloys. Symmetry and group theory. Vibrational structure, optical and Raman spectra, neutron scattering. Localized vibrations. Energy bands of selected semiconductors in detail (Si, Ge, SiGe, GaAs, AlAs, III-V, II-VI). Extrema of valence and conduction bands, cyclotron resonance. Shallow impurity states. Surface states. Transport phenomena in semiconductors. Intrinsic and homogeneously doped materials. Inhomogeneous doping. Transport in magnetic field poli. Magnetic semiconductors.
Literature
  • YU, Peter Y. and Manuel CARDONA. Fundamentals of semiconductors : physics and materials properties. 4th ed. Heidelberg: Springer, 2010. xx, 775. ISBN 9783642007095. info
  • GROSSO, Giuseppe and Guiseppe PASTORI PARRAVICINI. Solid state physics. San Diego: Academic Press, 2000. xiii, 727. ISBN 012304460X. info
Teaching methods
Lectures, excercises
Assessment methods
Exam: written part with solutions of several problems, oral exam, testing - the general knowledge of the course scope, - in-depth understanding of a selected part of the course.
Language of instruction
Czech
Follow-Up Courses
Further Comments
The course is taught annually.
The course is taught: every week.
The course is also listed under the following terms Spring 2012, spring 2012 - acreditation, Spring 2013, Spring 2014, Spring 2015, Spring 2016, Spring 2017, spring 2018, Spring 2019, Spring 2020.
  • Enrolment Statistics (recent)
  • Permalink: https://is.muni.cz/course/sci/spring2021/F9800