| FALUB, Claudiu Valentin, Thomas KREILIGER, A. TABOADA, Fabio ISA, Daniel CHRASTINA, G. ISELLA, E. MULLER, Mojmír MEDUŇA, R. BERGAMASCHINI, Anna MARZEGALLI, E. BONERA, F. PEZZOLI, Leo MIGLIO, P. NIEDERMANN, A. NEELS, A. PEZOUS, R. KAUFMANN, A. DOMMANN a Hans VON KAENEL. Three Dimensional Heteroepitaxy: A New Path For Monolithically Integrating Mismatched Materials With Silicon. In 2012 International Semiconductor Conference (CAS) Vols 1 and 2. New York: IEEE, 2012, s. 45-50. ISBN 978-1-4673-0736-9. Dostupné z: https://dx.doi.org/10.1109/SMICND.2012.6400698. |
Další formáty:
BibTeX
LaTeX
RIS
@inproceedings{1090473,
author = {Falub, Claudiu Valentin and Kreiliger, Thomas and Taboada, A. and Isa, Fabio and Chrastina, Daniel and Isella, G. and Muller, E. and Meduňa, Mojmír and Bergamaschini, R. and Marzegalli, Anna and Bonera, E. and Pezzoli, F. and Miglio, Leo and Niedermann, P. and Neels, A. and Pezous, A. and Kaufmann, R. and Dommann, A. and von Kaenel, Hans},
address = {New York},
booktitle = {2012 International Semiconductor Conference (CAS) Vols 1 and 2},
doi = {http://dx.doi.org/10.1109/SMICND.2012.6400698},
keywords = {monolithic integration; high quality Ge; elimination of cracking; threading-dislocation densities; epitaxial necking; patterned Si substrates; electrical properties},
howpublished = {tištěná verze "print"},
language = {eng},
location = {New York},
isbn = {978-1-4673-0736-9},
pages = {45-50},
publisher = {IEEE},
title = {Three Dimensional Heteroepitaxy: A New Path For Monolithically Integrating Mismatched Materials With Silicon},
url = {http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6400698},
year = {2012}
}
TY - JOUR
ID - 1090473
AU - Falub, Claudiu Valentin - Kreiliger, Thomas - Taboada, A. - Isa, Fabio - Chrastina, Daniel - Isella, G. - Muller, E. - Meduňa, Mojmír - Bergamaschini, R. - Marzegalli, Anna - Bonera, E. - Pezzoli, F. - Miglio, Leo - Niedermann, P. - Neels, A. - Pezous, A. - Kaufmann, R. - Dommann, A. - von Kaenel, Hans
PY - 2012
TI - Three Dimensional Heteroepitaxy: A New Path For Monolithically Integrating Mismatched Materials With Silicon
PB - IEEE
CY - New York
SN - 9781467307369
KW - monolithic integration
KW - high quality Ge
KW - elimination of cracking
KW - threading-dislocation densities
KW - epitaxial necking
KW - patterned Si substrates
KW - electrical properties
UR - http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6400698
L2 - http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6400698
N2 - In the quest for a Ge x-ray detector monolithically integrated onto a Si-CMOS chip we developed a novel method for combining dissimilar materials that may provide a solution to the main problems of heteroepitaxy, e.g. high threading dislocation densities, wafer bowing and cracks.
ER -
FALUB, Claudiu Valentin, Thomas KREILIGER, A. TABOADA, Fabio ISA, Daniel CHRASTINA, G. ISELLA, E. MULLER, Mojmír MEDUŇA, R. BERGAMASCHINI, Anna MARZEGALLI, E. BONERA, F. PEZZOLI, Leo MIGLIO, P. NIEDERMANN, A. NEELS, A. PEZOUS, R. KAUFMANN, A. DOMMANN a Hans VON KAENEL. Three Dimensional Heteroepitaxy: A New Path For Monolithically Integrating Mismatched Materials With Silicon. In \textit{2012 International Semiconductor Conference (CAS) Vols 1 and 2}. New York: IEEE, 2012, s.~45-50. ISBN~978-1-4673-0736-9. Dostupné z: https://dx.doi.org/10.1109/SMICND.2012.6400698.
|
