Oxidation of Silicon Surface by DCSBD

SKÁCELOVÁ, Dana, Martin HANIČINEC, Pavel SŤAHEL and Mirko ČERNÁK. Oxidation of Silicon Surface by DCSBD. Online. In NANOCON 2012, 4th INTERNATIONAL CONFERENCE. Ostrava: TANGER Ltd., 2012, p. 778-781. ISBN 978-80-87294-32-1.

Basic information

• Original name: Oxidation of Silicon Surface by DCSBD
• Authors: SKÁCELOVÁ, Dana (203 Czech Republic, guarantor, belonging to the institution), Martin HANIČINEC (203 Czech Republic, belonging to the institution), Pavel SŤAHEL (203 Czech Republic, belonging to the institution) and Mirko ČERNÁK (703 Slovakia, belonging to the institution).
• Edition: Ostrava, NANOCON 2012, 4th INTERNATIONAL CONFERENCE, p. 778-781, 4 pp. 2012.
• Publisher: TANGER Ltd.

Other information

• Original language: English
• Type of outcome: Proceedings paper
• Field of Study: 10305 Fluids and plasma physics
• Country of publisher: Czech Republic
• Confidentiality degree: is not subject to a state or trade secret
• Publication form: electronic version available online
• WWW: URL
• RIV identification code: RIV/00216224:14310/12:00064653
• Organization unit: Faculty of Science
• ISBN: 978-80-87294-32-1
• UT WoS: 000333697100142
• Keywords in English: Coplanar DBD; silicon dioxide; oxidation; atmospheric pressure plasma
• Tags: AKR, rivok

Abstract

In the present work plasma oxidation of crystalline silicon (c-Si) surface in diffuse coplanar surface barrier discharge (DCSBD) generated at atmospheric pressure has been studied. Silicon surface has been oxidized in oxygen and argon plasma. The surface properties have been studied by means scanning electron microscopy (SEM) and energy dispersive X-ray (EDX) analyses. It was found that thin layer of amorphous silicon dioxide during the short treatment time was formed. Oxidation by DCSBD could represent new alternative of a low cost and fast oxidation process.

Links

• ED2.1.00/03.0086, research and development project: Name: Regionální VaV centrum pro nízkonákladové plazmové a nanotechnologické povrchové úpravy