Room temperature plasma oxidation in DCSBD: A new method for
preparation of silicon dioxide films at atmospheric pressure

J 2013

Room temperature plasma oxidation in DCSBD: A new method for preparation of silicon dioxide films at atmospheric pressure

SKÁCELOVÁ, Dana, Vladimir DANILOV, Jan SCHÄFER, Antje QUADE, Pavel SŤAHEL et. al.

Basic information

Original name

Room temperature plasma oxidation in DCSBD: A new method for preparation of silicon dioxide films at atmospheric pressure

Authors

SKÁCELOVÁ, Dana (203 Czech Republic, guarantor, belonging to the institution), Vladimir DANILOV (276 Germany), Jan SCHÄFER (276 Germany), Antje QUADE (276 Germany), Pavel SŤAHEL (203 Czech Republic, belonging to the institution), Mirko ČERNÁK (703 Slovakia, belonging to the institution) and Jürgen MEICHSNER (276 Germany)

Edition

Materials Science & Engineering B, Elsevier B.V. 2013, 0921-5107

Other information

Language

English

Type of outcome

Článek v odborném periodiku

Field of Study

10305 Fluids and plasma physics

Country of publisher

Netherlands

Confidentiality degree

není předmětem státního či obchodního tajemství

References:

URL

Impact factor

Impact factor: 2.122

RIV identification code

RIV/00216224:14310/13:00068098

Organization unit

Faculty of Science

DOI

http://dx.doi.org/10.1016/j.mseb.2012.10.017

UT WoS

000318581800018

Keywords in English

Atmospheric pressure plasma; Plasma oxidation; Silicon dioxide; Coplanar DBD

Abstract

V originále

In this paper a new process for the preparation of thin silicon dioxide (SiO2) film is presented: the oxidation of c-Si (1 1 1) surface in atmospheric pressure plasma at room temperature. Diffuse coplanar surface barrier discharge (DCSBD) at atmospheric pressure in air and oxygen atmosphere has been used. The oxidation rate and the thickness of oxidized layers were estimated by ellipsometry. The structure and the chemical composition of oxidized layers were investigated by infrared reflection absorption spectroscopy (IRRAS), X-ray photoelectron spectroscopy (XPS) and energy dispersive X-ray (EDX) analysis. Scanning electron microscopy (SEM) was used to observe the morphology of the layer surface. It was found that stoichiometric SiO2 layers were obtained with oxidation rates comparable to thermal oxidation.

Links

ED2.1.00/03.0086, research and development project

Name: Regionální VaV centrum pro nízkonákladové plazmové a nanotechnologické povrchové úpravy

Citovat

SKÁCELOVÁ, Dana, Vladimir DANILOV, Jan SCHÄFER, Antje QUADE, Pavel SŤAHEL, Mirko ČERNÁK and Jürgen MEICHSNER. Room temperature plasma oxidation in DCSBD: A new method for preparation of silicon dioxide films at atmospheric pressure. Materials Science & Engineering B. Elsevier B.V., 2013, vol. 178, No 9, p. 651–655. ISSN 0921-5107. Available from: https://dx.doi.org/10.1016/j.mseb.2012.10.017.

@article{1102820,
   author = {Skácelová, Dana and Danilov, Vladimir and Schäfer, Jan and Quade, Antje and Sťahel, Pavel and Černák, Mirko and Meichsner, Jürgen},
   article_number = {9},
   doi = {http://dx.doi.org/10.1016/j.mseb.2012.10.017},
   keywords = {Atmospheric pressure plasma; Plasma oxidation; Silicon dioxide; Coplanar DBD},
   language = {eng},
   issn = {0921-5107},
   journal = {Materials Science & Engineering B},
   title = {Room temperature plasma oxidation in DCSBD: A new method for preparation of silicon dioxide films at atmospheric pressure},
   url = {http://www.sciencedirect.com/science/article/pii/S0921510712004989},
   volume = {178},
   year = {2013}
}

TY  - JOUR
ID  - 1102820
AU  - Skácelová, Dana - Danilov, Vladimir - Schäfer, Jan - Quade, Antje - Sťahel, Pavel - Černák, Mirko - Meichsner, Jürgen
PY  - 2013
TI  - Room temperature plasma oxidation in DCSBD: A new method for preparation of silicon dioxide films at atmospheric pressure
JF  - Materials Science & Engineering B
VL  - 178
IS  - 9
SP  - 651–655
EP  - 651–655
PB  - Elsevier B.V.
SN  - 09215107
KW  - Atmospheric pressure plasma
KW  - Plasma oxidation
KW  - Silicon dioxide
KW  - Coplanar DBD
UR  - http://www.sciencedirect.com/science/article/pii/S0921510712004989
N2  - In this paper a new process for the preparation of thin silicon dioxide (SiO2) film is presented: the oxidation of c-Si (1 1 1) surface in atmospheric pressure plasma at room temperature. Diffuse coplanar surface barrier discharge (DCSBD) at atmospheric pressure in air and oxygen atmosphere has been used. The oxidation rate and the thickness of oxidized layers were estimated by ellipsometry. The structure and the chemical composition of oxidized layers were investigated by infrared reflection absorption spectroscopy (IRRAS), X-ray photoelectron spectroscopy (XPS) and energy dispersive X-ray (EDX) analysis. Scanning electron microscopy (SEM) was used to observe the morphology of the layer surface. It was found that stoichiometric SiO2 layers were obtained with oxidation rates comparable to thermal oxidation.
ER  -

SKÁCELOVÁ, Dana, Vladimir DANILOV, Jan SCHÄFER, Antje QUADE, Pavel SŤAHEL, Mirko ČERNÁK and Jürgen MEICHSNER. Room temperature plasma oxidation in DCSBD: A new method for preparation of silicon dioxide films at atmospheric pressure. \textit{Materials Science \&{} Engineering B}. Elsevier B.V., 2013, vol.~178, No~9, p.~651–655. ISSN~0921-5107. Available from: https://dx.doi.org/10.1016/j.mseb.2012.10.017.

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