PECVD of nanostructured SiO2 in a modulated microwave plasma jet at atmospheric pressure
Authors
HNILICA, Jaroslav (203 Czech Republic, belonging to the institution), Jan SCHÄFER (203 Czech Republic), Rüdiger FOEST (276 Germany), Lenka ZAJÍČKOVÁ (203 Czech Republic, belonging to the institution) and Vít KUDRLE (203 Czech Republic, guarantor, belonging to the institution)
Edition
J. Phys. D: Appl. Phys. 2013, 0022-3727
Other information
Language
English
Type of outcome
Článek v odborném periodiku
Field of Study
10305 Fluids and plasma physics
Country of publisher
United Kingdom of Great Britain and Northern Ireland
We performed the thin films deposition using atmospheric pressure plasma enhanced chemical vapour deposition (AP-PECVD) by means of a microwave plasma jet operating with mixtures of argon and tetrakis(trimethylsilyloxy)silane (TTMS).
Links
ED1.1.00/02.0068, research and development project
Name: CEITEC - central european institute of technology
ED2.1.00/03.0086, research and development project
Name: Regionální VaV centrum pro nízkonákladové plazmové a nanotechnologické povrchové úpravy
7AMB12DE005, research and development project
Name: Samoorganizace a procesy strukturalizace v plazmochemické depozici tenkých vrstev
Investor: Ministry of Education, Youth and Sports of the CR