| CAHA, Ondřej, P. KOSTELNÍK, Jan ŠIK, Y.D. KIM and Josef HUMLÍČEK. Lattice constants and optical response of pseudomorph Si-rich SiGe:B. Applied Physics Letters. USA: American institute of physics, 2013, vol. 103, No 20, p. "nestránkováno", 4 pp. ISSN 0003-6951. Available from: https://dx.doi.org/10.1063/1.4830367. |
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@article{1137295,
author = {Caha, Ondřej and Kostelník, P. and Šik, Jan and Kim, Y.D. and Humlíček, Josef},
article_location = {USA},
article_number = {20},
doi = {http://dx.doi.org/10.1063/1.4830367},
keywords = {silicon; SiGe alloys; heavy doping},
language = {eng},
issn = {0003-6951},
journal = {Applied Physics Letters},
title = {Lattice constants and optical response of pseudomorph Si-rich SiGe:B},
volume = {103},
year = {2013}
}
TY - JOUR
ID - 1137295
AU - Caha, Ondřej - Kostelník, P. - Šik, Jan - Kim, Y.D. - Humlíček, Josef
PY - 2013
TI - Lattice constants and optical response of pseudomorph Si-rich SiGe:B
JF - Applied Physics Letters
VL - 103
IS - 20
SP - "nestránkováno"
EP - "nestránkováno"
PB - American institute of physics
SN - 00036951
KW - silicon
KW - SiGe alloys
KW - heavy doping
N2 - Pseudomorph epitaxial films of Si1-xGex:B were grown on undoped (100) Si for x<0.026 and the B concentration of 1.3E20 cm-3. The in-plane and out-of-plane lattice constants were determined using the X-ray techniques for 004 symmetric and 224 asymmetric diffraction. The influence of B and Ge co-doping has been detected in reflectance and ellipsometric spectra from infrared to ultraviolet. Free-hole plasma and Fano-type resonances of Si phonons and localized 11B and 10B vibrations have been observed. The spectral shift of E1 electronic transitions has been quantified. We found a simple way to test the variations of Ge content using relative reflectance spectra.
ER -
CAHA, Ondřej, P. KOSTELNÍK, Jan ŠIK, Y.D. KIM and Josef HUMLÍČEK. Lattice constants and optical response of pseudomorph Si-rich SiGe:B. \textit{Applied Physics Letters}. USA: American institute of physics, 2013, vol.~103, No~20, p.~''nestránkováno'', 4 pp. ISSN~0003-6951. Available from: https://dx.doi.org/10.1063/1.4830367.
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