Growth, Structure, and Electronic Properties of Epitaxial
Bismuth Telluride Topological Insulator Films on BaF2 (111)
Substrates

J 2013

Growth, Structure, and Electronic Properties of Epitaxial Bismuth Telluride Topological Insulator Films on BaF2 (111) Substrates

CAHA, Ondřej, Adam DUBROKA, Josef HUMLÍČEK, Václav HOLÝ, Hubert STEINER et. al.

Basic information

Original name

Growth, Structure, and Electronic Properties of Epitaxial Bismuth Telluride Topological Insulator Films on BaF2 (111) Substrates

Name in Czech

Růst, strukturní a elektronové vlastnosti epitaxních vrstvy topologického izolátoru bismut teluridu deponované na BaF2 substrátech

Authors

CAHA, Ondřej (203 Czech Republic, guarantor, belonging to the institution), Adam DUBROKA (203 Czech Republic, belonging to the institution), Josef HUMLÍČEK (203 Czech Republic, belonging to the institution), Václav HOLÝ (203 Czech Republic), Hubert STEINER (40 Austria), M. UL-HASSAN (40 Austria), Jaime SANCHEZ-BARRIGA (724 Spain), Oliver RADER (276 Germany), T. N. STANISLAVCHUK (840 United States of America), Andrei A. SIRENKO (840 United States of America), Günther BAUER (40 Austria) and Günter SPRINGHOLZ (40 Austria)

Edition

Crystal Growth & Design, Washington, American Chemical Society, 2013, 1528-7483

Other information

Language

English

Type of outcome

Článek v odborném periodiku

Field of Study

10302 Condensed matter physics

Country of publisher

United States of America

Confidentiality degree

není předmětem státního či obchodního tajemství

Impact factor

Impact factor: 4.558

RIV identification code

RIV/00216224:14740/13:00066623

Organization unit

Central European Institute of Technology

DOI

http://dx.doi.org/10.1021/cg400048g

UT WoS

000323020000013

Keywords (in Czech)

Diracův kužel; tenké vrstvy; povrchové stavy; pásová struktura; BI2TE3; BI2SE3; RAMAN; SELENID;

Keywords in English

SINGLE DIRAC CONE; THIN-FILMS; SURFACE-STATES; BAND-STRUCTURE; BI2TE3 FILMS; BI2SE3; RAMAN; SELENIDE;

Abstract

ORIG CZ

V originále

Epitaxial growth of topological insulator bismuth telluride by molecular beam epitaxy onto BaF2 (111) substrates is studied using Bi2Te3 and Te as source materials. By changing the beam flux composition, different stoichiometric phases are obtained, resulting in high quality Bi2Te3 and Bi1Te1 epilayers as shown by Raman spectroscopy and high-resolution X-ray diffraction. From X-ray reciprocal space mapping, the residual strain, as well as size of coherently scattering domains are deduced. The Raman modes for the two different phases are identified and the dielectric functions derived from spectroscopic ellipsometry investigations. Angular resolved photoemission reveals topologically protected surface states of the Bi2Te3 epilayers. Thus, BaF2 is a perfectly suited substrate material for the bismuth telluride compounds.

In Czech

Epitaxní vrstvy teluridů bismutu byly připraveny molekulární epitaxí z Bi2Te3 a Te. Změna toku jednotlivých složek ovlivnovala strukturu vrstev, která byla zkoumána pomocí rtg difrakce, Ramanské spektroskopie.

Links

ED1.1.00/02.0068, research and development project

Name: CEITEC - central european institute of technology

GAP204/12/0595, research and development project

Name: Elektronové a strukturní vlastnosti trojrozměrných topologických izolantů

Investor: Czech Science Foundation

Citovat

CAHA, Ondřej, Adam DUBROKA, Josef HUMLÍČEK, Václav HOLÝ, Hubert STEINER, M. UL-HASSAN, Jaime SANCHEZ-BARRIGA, Oliver RADER, T. N. STANISLAVCHUK, Andrei A. SIRENKO, Günther BAUER and Günter SPRINGHOLZ. Growth, Structure, and Electronic Properties of Epitaxial Bismuth Telluride Topological Insulator Films on BaF2 (111) Substrates. Crystal Growth & Design. Washington: American Chemical Society, 2013, vol. 13, No 8, p. 3365-3373. ISSN 1528-7483. Available from: https://dx.doi.org/10.1021/cg400048g.

@article{1137539,
   author = {Caha, Ondřej and Dubroka, Adam and Humlíček, Josef and Holý, Václav and Steiner, Hubert and UlandHassan, M. and SanchezandBarriga, Jaime and Rader, Oliver and Stanislavchuk, T. N. and Sirenko, Andrei A. and Bauer, Günther and Springholz, Günter},
   article_location = {Washington},
   article_number = {8},
   doi = {http://dx.doi.org/10.1021/cg400048g},
   keywords = {SINGLE DIRAC CONE; THIN-FILMS; SURFACE-STATES; BAND-STRUCTURE; BI2TE3 FILMS; BI2SE3; RAMAN; SELENIDE;},
   language = {eng},
   issn = {1528-7483},
   journal = {Crystal Growth & Design},
   title = {Growth, Structure, and Electronic Properties of Epitaxial Bismuth Telluride Topological Insulator Films on BaF2 (111) Substrates},
   volume = {13},
   year = {2013}
}

TY  - JOUR
ID  - 1137539
AU  - Caha, Ondřej - Dubroka, Adam - Humlíček, Josef - Holý, Václav - Steiner, Hubert - Ul-Hassan, M. - Sanchez-Barriga, Jaime - Rader, Oliver - Stanislavchuk, T. N. - Sirenko, Andrei A. - Bauer, Günther - Springholz, Günter
PY  - 2013
TI  - Growth, Structure, and Electronic Properties of Epitaxial Bismuth Telluride Topological Insulator Films on BaF2 (111) Substrates
JF  - Crystal Growth & Design
VL  - 13
IS  - 8
SP  - 3365-3373
EP  - 3365-3373
PB  - American Chemical Society
SN  - 15287483
KW  - SINGLE DIRAC CONE
KW  - THIN-FILMS
KW  - SURFACE-STATES
KW  - BAND-STRUCTURE
KW  - BI2TE3 FILMS
KW  - BI2SE3
KW  - RAMAN
KW  - SELENIDE;
N2  - Epitaxial growth of topological insulator bismuth telluride by molecular beam epitaxy onto BaF2 (111) substrates is studied using Bi2Te3 and Te as source materials. By changing the beam flux composition, different stoichiometric phases are obtained, resulting in high quality Bi2Te3 and Bi1Te1 epilayers as shown by Raman spectroscopy and high-resolution X-ray diffraction. From X-ray reciprocal space mapping, the residual strain, as well as size of coherently scattering domains are deduced. The Raman modes for the two different phases are identified and the dielectric functions derived from spectroscopic ellipsometry investigations. Angular resolved photoemission reveals topologically protected surface states of the Bi2Te3 epilayers. Thus, BaF2 is a perfectly suited substrate material for the bismuth telluride compounds.
ER  -

CAHA, Ondřej, Adam DUBROKA, Josef HUMLÍČEK, Václav HOLÝ, Hubert STEINER, M. UL-HASSAN, Jaime SANCHEZ-BARRIGA, Oliver RADER, T. N. STANISLAVCHUK, Andrei A. SIRENKO, Günther BAUER and Günter SPRINGHOLZ. Growth, Structure, and Electronic Properties of Epitaxial Bismuth Telluride Topological Insulator Films on BaF2 (111) Substrates. \textit{Crystal Growth \&{} Design}. Washington: American Chemical Society, 2013, vol.~13, No~8, p.~3365-3373. ISSN~1528-7483. Available from: https://dx.doi.org/10.1021/cg400048g.

Detailed Information on Publication Record