| CAHA, Ondřej, Adam DUBROKA, Josef HUMLÍČEK, Václav HOLÝ, Hubert STEINER, M. UL-HASSAN, Jaime SANCHEZ-BARRIGA, Oliver RADER, T. N. STANISLAVCHUK, Andrei A. SIRENKO, Günther BAUER and Günter SPRINGHOLZ. Growth, Structure, and Electronic Properties of Epitaxial Bismuth Telluride Topological Insulator Films on BaF2 (111) Substrates. Crystal Growth & Design. Washington: American Chemical Society, 2013, vol. 13, No 8, p. 3365-3373. ISSN 1528-7483. Available from: https://dx.doi.org/10.1021/cg400048g. |
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@article{1137539,
author = {Caha, Ondřej and Dubroka, Adam and Humlíček, Josef and Holý, Václav and Steiner, Hubert and UlandHassan, M. and SanchezandBarriga, Jaime and Rader, Oliver and Stanislavchuk, T. N. and Sirenko, Andrei A. and Bauer, Günther and Springholz, Günter},
article_location = {Washington},
article_number = {8},
doi = {http://dx.doi.org/10.1021/cg400048g},
keywords = {SINGLE DIRAC CONE; THIN-FILMS; SURFACE-STATES; BAND-STRUCTURE; BI2TE3 FILMS; BI2SE3; RAMAN; SELENIDE;},
language = {eng},
issn = {1528-7483},
journal = {Crystal Growth & Design},
title = {Growth, Structure, and Electronic Properties of Epitaxial Bismuth Telluride Topological Insulator Films on BaF2 (111) Substrates},
volume = {13},
year = {2013}
}
TY - JOUR
ID - 1137539
AU - Caha, Ondřej - Dubroka, Adam - Humlíček, Josef - Holý, Václav - Steiner, Hubert - Ul-Hassan, M. - Sanchez-Barriga, Jaime - Rader, Oliver - Stanislavchuk, T. N. - Sirenko, Andrei A. - Bauer, Günther - Springholz, Günter
PY - 2013
TI - Growth, Structure, and Electronic Properties of Epitaxial Bismuth Telluride Topological Insulator Films on BaF2 (111) Substrates
JF - Crystal Growth & Design
VL - 13
IS - 8
SP - 3365-3373
EP - 3365-3373
PB - American Chemical Society
SN - 15287483
KW - SINGLE DIRAC CONE
KW - THIN-FILMS
KW - SURFACE-STATES
KW - BAND-STRUCTURE
KW - BI2TE3 FILMS
KW - BI2SE3
KW - RAMAN
KW - SELENIDE;
N2 - Epitaxial growth of topological insulator bismuth telluride by molecular beam epitaxy onto BaF2 (111) substrates is studied using Bi2Te3 and Te as source materials. By changing the beam flux composition, different stoichiometric phases are obtained, resulting in high quality Bi2Te3 and Bi1Te1 epilayers as shown by Raman spectroscopy and high-resolution X-ray diffraction. From X-ray reciprocal space mapping, the residual strain, as well as size of coherently scattering domains are deduced. The Raman modes for the two different phases are identified and the dielectric functions derived from spectroscopic ellipsometry investigations. Angular resolved photoemission reveals topologically protected surface states of the Bi2Te3 epilayers. Thus, BaF2 is a perfectly suited substrate material for the bismuth telluride compounds.
ER -
CAHA, Ondřej, Adam DUBROKA, Josef HUMLÍČEK, Václav HOLÝ, Hubert STEINER, M. UL-HASSAN, Jaime SANCHEZ-BARRIGA, Oliver RADER, T. N. STANISLAVCHUK, Andrei A. SIRENKO, Günther BAUER and Günter SPRINGHOLZ. Growth, Structure, and Electronic Properties of Epitaxial Bismuth Telluride Topological Insulator Films on BaF2 (111) Substrates. \textit{Crystal Growth \&{} Design}. Washington: American Chemical Society, 2013, vol.~13, No~8, p.~3365-3373. ISSN~1528-7483. Available from: https://dx.doi.org/10.1021/cg400048g.
|
