Influence of deposition conditions on electrical and mechanical
properties of Sm2O3 doped CeO2 thin films prepared by EB-PVD
(+IBAD) methods part 2. Indentation hardness and effective
elastic modulus

J 2013

Influence of deposition conditions on electrical and mechanical properties of Sm2O3 doped CeO2 thin films prepared by EB-PVD (+IBAD) methods part 2. Indentation hardness and effective elastic modulus

BURŠÍKOVÁ, Vilma, Marie HARTMANOVÁ, Vladislav NAVRÁTIL and C. MANSILLA

Basic information

Original name

Influence of deposition conditions on electrical and mechanical properties of Sm2O3 doped CeO2 thin films prepared by EB-PVD (+IBAD) methods part 2. Indentation hardness and effective elastic modulus

Name in Czech

Vliv depozičních podmínek na elektrické a mechanické vlastností tenkých CeO2 vrstev dopovaných s Sm2O3 připravených metodami EB-PVD (+IBAD) 2. část Indentační tvrdost a efektivní elastický modul

Authors

BURŠÍKOVÁ, Vilma (203 Czech Republic, guarantor, belonging to the institution), Marie HARTMANOVÁ (703 Slovakia), Vladislav NAVRÁTIL (203 Czech Republic, belonging to the institution) and C. MANSILLA (724 Spain)

Edition

Russian Journal of Electrochemistry, Pleiades Publishing, Ltd. 2013, 1023-1935

Other information

Language

English

Type of outcome

Článek v odborném periodiku

Field of Study

10305 Fluids and plasma physics

Country of publisher

Russian Federation

Confidentiality degree

není předmětem státního či obchodního tajemství

Impact factor

Impact factor: 0.660

RIV identification code

RIV/00216224:14310/13:00070881

Organization unit

Faculty of Science

DOI

http://dx.doi.org/10.1134/S1023193513070033

UT WoS

000321773800003

Keywords (in Czech)

mechanické vlastnosti; tvrdost; elastický modul; nanoindentace; tenké vrstvy; CeO2; Sm2O3; dopování

Keywords in English

mechanical properties; hardness; elastic modulus; nanoindentation; thin films; CeO2; Sm2O3; doping

Abstract

ORIG CZ

V originále

The study of polycrystalline CeO2 + xSm2O3 (x = 0, 10.9–15.9 mol %) thin films deposited by Electron Beam Physical Vapour Deposition (EBPVD) and Ionic Beam Assisted Deposition (IBAD) techniques on the Si substrate was devoted to the influence of deposition conditions used, namely composition x, deposition temperature Tdep and Ar+ ion bombardment, on the (micro)hardness, Hpl and elastic modulus,Y with respect to the film structure and microstructure. These mechanical characteristics were investigated by the instrumented indentation technique as the functions of relative indentation depth hrel = hmax/t and the values obtained were compared with those obtained by the classical Vickers technique. Results of this study are described and discussed.

In Czech

Práce byla zaměřená na studium polykrystalických tenkých vrstev CeO2 + xSm2O3 (x = 0, 10.9–15.9 mol %) deponovaných metodou EBPVD a IBAD technikami na křemíkové substráty. Soustředí se hlavně na stanovení vlivu depozičních podmínek, jako jsou složení x, depoziční teplota Tdep a iontový bombard Ar+ , na (mikro)tvrdost (micro), Hpl a elastický modul,Y s ohledem na struktura a složení vrstev. Tyto mechanické charakteristiky byly studovány metodou instrumentované vtiskové zkoušky. Hodnoty tvrdostí byly srovnávány s hodnotami obdrženými na základě klasické Vickersovy zkoušky.

Citovat

BURŠÍKOVÁ, Vilma, Marie HARTMANOVÁ, Vladislav NAVRÁTIL and C. MANSILLA. Influence of deposition conditions on electrical and mechanical properties of Sm2O3 doped CeO2 thin films prepared by EB-PVD (+IBAD) methods part 2. Indentation hardness and effective elastic modulus. Russian Journal of Electrochemistry. Pleiades Publishing, Ltd., 2013, vol. 49, No 7, p. 619-627. ISSN 1023-1935. Available from: https://dx.doi.org/10.1134/S1023193513070033.

@article{1139210,
   author = {Buršíková, Vilma and Hartmanová, Marie and Navrátil, Vladislav and Mansilla, C.},
   article_number = {7},
   doi = {http://dx.doi.org/10.1134/S1023193513070033},
   keywords = {mechanical properties; hardness; elastic modulus; nanoindentation; thin films; CeO2; Sm2O3; doping},
   language = {eng},
   issn = {1023-1935},
   journal = {Russian Journal of Electrochemistry},
   title = {Influence of deposition conditions on electrical and mechanical properties of Sm2O3 doped CeO2 thin films prepared by EB-PVD (+IBAD) methods part 2. Indentation hardness and effective elastic modulus},
   volume = {49},
   year = {2013}
}

TY  - JOUR
ID  - 1139210
AU  - Buršíková, Vilma - Hartmanová, Marie - Navrátil, Vladislav - Mansilla, C.
PY  - 2013
TI  - Influence of deposition conditions on electrical and mechanical properties of Sm2O3 doped CeO2 thin films prepared by EB-PVD (+IBAD) methods part 2. Indentation hardness and effective elastic modulus
JF  - Russian Journal of Electrochemistry
VL  - 49
IS  - 7
SP  - 619-627
EP  - 619-627
PB  - Pleiades Publishing, Ltd.
SN  - 10231935
KW  - mechanical properties
KW  - hardness
KW  - elastic modulus
KW  - nanoindentation
KW  - thin films
KW  - CeO2
KW  - Sm2O3
KW  - doping
N2  - The study of polycrystalline CeO2 + xSm2O3 (x = 0, 10.9–15.9 mol %) thin films deposited by Electron Beam Physical Vapour Deposition (EBPVD) and Ionic Beam Assisted Deposition (IBAD) techniques on the Si substrate was devoted to the influence of deposition conditions used, namely composition x, deposition temperature Tdep and Ar+ ion bombardment, on the (micro)hardness, Hpl and elastic modulus,Y with respect to the film structure and microstructure. These mechanical characteristics were investigated by the instrumented indentation technique as the functions of relative indentation depth hrel = hmax/t and the values obtained were compared with those obtained by the classical Vickers technique. Results of this study are described and discussed.
ER  -

BURŠÍKOVÁ, Vilma, Marie HARTMANOVÁ, Vladislav NAVRÁTIL and C. MANSILLA. Influence of deposition conditions on electrical and mechanical properties of Sm2O3 doped CeO2 thin films prepared by EB-PVD (+IBAD) methods part 2. Indentation hardness and effective elastic modulus. \textit{Russian Journal of Electrochemistry}. Pleiades Publishing, Ltd., 2013, vol.~49, No~7, p.~619-627. ISSN~1023-1935. Available from: https://dx.doi.org/10.1134/S1023193513070033.

Detailed Information on Publication Record