Application of sum rule to the dispersion model of hydrogenated
amorphous silicon

J 2013

Application of sum rule to the dispersion model of hydrogenated amorphous silicon

FRANTA, Daniel, David NEČAS, Lenka ZAJÍČKOVÁ, Ivan OHLÍDAL, Jiří STUCHLÍK et. al.

Basic information

Original name

Application of sum rule to the dispersion model of hydrogenated amorphous silicon

Authors

FRANTA, Daniel (203 Czech Republic, guarantor, belonging to the institution), David NEČAS (203 Czech Republic, belonging to the institution), Lenka ZAJÍČKOVÁ (203 Czech Republic, belonging to the institution), Ivan OHLÍDAL (203 Czech Republic, belonging to the institution), Jiří STUCHLÍK (203 Czech Republic) and Dagmar CHVOSTOVA (203 Czech Republic)

Edition

Thin Solid Films, Lausanne, Elsevier Science, 2013, 0040-6090

Other information

Language

English

Type of outcome

Článek v odborném periodiku

Field of Study

10302 Condensed matter physics

Country of publisher

Switzerland

Confidentiality degree

není předmětem státního či obchodního tajemství

References:

URL

Impact factor

Impact factor: 1.867

RIV identification code

RIV/00216224:14740/13:00071631

Organization unit

Central European Institute of Technology

DOI

http://dx.doi.org/10.1016/j.tsf.2013.04.012

UT WoS

000321111100039

Keywords in English

Optical constants; Ellipsometry; Spectrophotometry; a-Si:H; Urbach tail; Localized states; Sum rule

Abstract

V originále

Optical data obtained for a-Si:H films by ellipsometry and spectrophotometry in the wide photon energy range 0.046–8.9 eV are fitted using the analytical dispersion models based on the application of the sum rule. The models include all absorption processes ranging from phonon absorption in IR region to core electron excitations in X-ray region. They take into account the existence of extended and localized states of valence electrons and distinguish transitions to conduction band and higher energy electron states. It is demonstrated that a combination of optical measurements over the wide range, combined with reasonable assumptions about the optical response in regions where no experimental data are available can lead to dispersion models enabling to determine the mass density of the film. Comparing the density of states determined by tight-binding method with that obtained from optical data, it is shown that an excitonic effect is significant in a-Si:H and causes a redistribution of transition probability from higher energies to the broad peak centered at 3.5 eV. Moreover, it is suggested how to apply the sum rule in the commercial ellipsometric software implementing the Tauc–Lorentz model.

Links

ED1.1.00/02.0068, research and development project

Name: CEITEC - central european institute of technology

ED2.1.00/03.0086, research and development project

Name: Regionální VaV centrum pro nízkonákladové plazmové a nanotechnologické povrchové úpravy

Files attached

ZVV_2013_1161978_Application_of_sum.pdf

Request the author's version of the file

TSF539_233.pdf

Request the author's version of the file

Citovat

FRANTA, Daniel, David NEČAS, Lenka ZAJÍČKOVÁ, Ivan OHLÍDAL, Jiří STUCHLÍK and Dagmar CHVOSTOVA. Application of sum rule to the dispersion model of hydrogenated amorphous silicon. Thin Solid Films. Lausanne: Elsevier Science, 2013, vol. 539, Jul, p. 233-244. ISSN 0040-6090. Available from: https://dx.doi.org/10.1016/j.tsf.2013.04.012.

@article{1161978,
   author = {Franta, Daniel and Nečas, David and Zajíčková, Lenka and Ohlídal, Ivan and Stuchlík, Jiří and Chvostova, Dagmar},
   article_location = {Lausanne},
   article_number = {Jul},
   doi = {http://dx.doi.org/10.1016/j.tsf.2013.04.012},
   keywords = {Optical constants; Ellipsometry; Spectrophotometry; a-Si:H; Urbach tail; Localized states; Sum rule},
   language = {eng},
   issn = {0040-6090},
   journal = {Thin Solid Films},
   title = {Application of sum rule to the dispersion model of hydrogenated amorphous silicon},
   url = {http://dx.doi.org/10.1016/j.tsf.2013.04.012},
   volume = {539},
   year = {2013}
}

TY  - JOUR
ID  - 1161978
AU  - Franta, Daniel - Nečas, David - Zajíčková, Lenka - Ohlídal, Ivan - Stuchlík, Jiří - Chvostova, Dagmar
PY  - 2013
TI  - Application of sum rule to the dispersion model of hydrogenated amorphous silicon
JF  - Thin Solid Films
VL  - 539
IS  - Jul
SP  - 233-244
EP  - 233-244
PB  - Elsevier Science
SN  - 00406090
KW  - Optical constants
KW  - Ellipsometry
KW  - Spectrophotometry
KW  - a-Si:H
KW  - Urbach tail
KW  - Localized states
KW  - Sum rule
UR  - http://dx.doi.org/10.1016/j.tsf.2013.04.012
L2  - http://dx.doi.org/10.1016/j.tsf.2013.04.012
N2  - Optical data obtained for a-Si:H films by ellipsometry and spectrophotometry in the wide photon energy range 0.046–8.9 eV are fitted using the analytical dispersion models based on the application of the sum rule. The models include all absorption processes ranging from phonon absorption in IR region to core electron excitations in X-ray region. They take into account the existence of extended and localized states of valence electrons and distinguish transitions to conduction band and higher energy electron states. It is demonstrated that a combination of optical measurements over the wide range, combined with reasonable assumptions about the optical response in regions where no experimental data are available can lead to dispersion models enabling to determine the mass density of the film. Comparing the density of states determined by tight-binding method with that obtained from optical data, it is shown that an excitonic effect is significant in a-Si:H and causes a redistribution of transition probability from higher energies to the broad peak centered at 3.5 eV. Moreover, it is suggested how to apply the sum rule in the commercial ellipsometric software implementing the Tauc–Lorentz model.
ER  -

FRANTA, Daniel, David NEČAS, Lenka ZAJÍČKOVÁ, Ivan OHLÍDAL, Jiří STUCHLÍK and Dagmar CHVOSTOVA. Application of sum rule to the dispersion model of hydrogenated amorphous silicon. \textit{Thin Solid Films}. Lausanne: Elsevier Science, 2013, vol.~539, Jul, p.~233-244. ISSN~0040-6090. Available from: https://dx.doi.org/10.1016/j.tsf.2013.04.012.

Detailed Information on Publication Record