Advanced modeling for optical characterization of amorphous
hydrogenated silicon films

J 2013

Advanced modeling for optical characterization of amorphous hydrogenated silicon films

FRANTA, Daniel, David NEČAS, Lenka ZAJÍČKOVÁ, Ivan OHLÍDAL, Jiří STUCHLÍK et. al.

Basic information

Original name

Advanced modeling for optical characterization of amorphous hydrogenated silicon films

Authors

FRANTA, Daniel (203 Czech Republic, guarantor, belonging to the institution), David NEČAS (203 Czech Republic, belonging to the institution), Lenka ZAJÍČKOVÁ (203 Czech Republic, belonging to the institution), Ivan OHLÍDAL (203 Czech Republic, belonging to the institution) and Jiří STUCHLÍK (203 Czech Republic)

Edition

Thin Solid Films, Lausanne, Elsevier Science, 2013, 0040-6090

Other information

Language

English

Type of outcome

Článek v odborném periodiku

Field of Study

10302 Condensed matter physics

Country of publisher

Switzerland

Confidentiality degree

není předmětem státního či obchodního tajemství

References:

URL

Impact factor

Impact factor: 1.867

RIV identification code

RIV/00216224:14740/13:00071634

Organization unit

Central European Institute of Technology

DOI

http://dx.doi.org/10.1016/j.tsf.2013.04.129

UT WoS

000323140600004

Keywords in English

Ellipsometry; Spectrophotometry; a-Si:H; Urbach tail; Localized states; Sum rule

Abstract

V originále

Amorphous hydrogenated silicon (a-Si:H) films deposited on glass and crystalline silicon substrates are analyzed using a multi-sample method combining ellipsometry and spectrophotometry in a spectral range of 0.046–8.9 eV, utilizing an analytical dispersion model based on parametrization of joint density of states and application of sum rule. This model includes all absorption processes from phonon absorption to core electron excitations. It is shown that if films deposited on both substrates are characterized together it is possible to study both phonon absorption and weak absorption processes below the band gap, i.e. the Urbach tail and absorption on localized states.

Links

ED1.1.00/02.0068, research and development project

Name: CEITEC - central european institute of technology

ED2.1.00/03.0086, research and development project

Name: Regionální VaV centrum pro nízkonákladové plazmové a nanotechnologické povrchové úpravy

Files attached

ZVV_2013_1161986.pdf

Request the author's version of the file

TSF541_12.pdf

Request the author's version of the file

Citovat

FRANTA, Daniel, David NEČAS, Lenka ZAJÍČKOVÁ, Ivan OHLÍDAL and Jiří STUCHLÍK. Advanced modeling for optical characterization of amorphous hydrogenated silicon films. Thin Solid Films. Lausanne: Elsevier Science, 2013, vol. 541, Aug, p. 12-16. ISSN 0040-6090. Available from: https://dx.doi.org/10.1016/j.tsf.2013.04.129.

@article{1161986,
   author = {Franta, Daniel and Nečas, David and Zajíčková, Lenka and Ohlídal, Ivan and Stuchlík, Jiří},
   article_location = {Lausanne},
   article_number = {Aug},
   doi = {http://dx.doi.org/10.1016/j.tsf.2013.04.129},
   keywords = {Ellipsometry; Spectrophotometry; a-Si:H; Urbach tail; Localized states; Sum rule},
   language = {eng},
   issn = {0040-6090},
   journal = {Thin Solid Films},
   title = {Advanced modeling for optical characterization of amorphous hydrogenated silicon films},
   url = {http://dx.doi.org/10.1016/j.tsf.2013.04.129},
   volume = {541},
   year = {2013}
}

TY  - JOUR
ID  - 1161986
AU  - Franta, Daniel - Nečas, David - Zajíčková, Lenka - Ohlídal, Ivan - Stuchlík, Jiří
PY  - 2013
TI  - Advanced modeling for optical characterization of amorphous hydrogenated silicon films
JF  - Thin Solid Films
VL  - 541
IS  - Aug
SP  - 12-16
EP  - 12-16
PB  - Elsevier Science
SN  - 00406090
KW  - Ellipsometry
KW  - Spectrophotometry
KW  - a-Si:H
KW  - Urbach tail
KW  - Localized states
KW  - Sum rule
UR  - http://dx.doi.org/10.1016/j.tsf.2013.04.129
L2  - http://dx.doi.org/10.1016/j.tsf.2013.04.129
N2  - Amorphous hydrogenated silicon (a-Si:H) films deposited on glass and crystalline silicon substrates are analyzed using a multi-sample method combining ellipsometry and spectrophotometry in a spectral range of 0.046–8.9 eV, utilizing an analytical dispersion model based on parametrization of joint density of states and application of sum rule. This model includes all absorption processes from phonon absorption to core electron excitations. It is shown that if films deposited on both substrates are characterized together it is possible to study both phonon absorption and weak absorption processes below the band gap, i.e. the Urbach tail and absorption on localized states.
ER  -

FRANTA, Daniel, David NEČAS, Lenka ZAJÍČKOVÁ, Ivan OHLÍDAL and Jiří STUCHLÍK. Advanced modeling for optical characterization of amorphous hydrogenated silicon films. \textit{Thin Solid Films}. Lausanne: Elsevier Science, 2013, vol.~541, Aug, p.~12-16. ISSN~0040-6090. Available from: https://dx.doi.org/10.1016/j.tsf.2013.04.129.

Detailed Information on Publication Record