FRANTA, Daniel, David NEČAS, Lenka ZAJÍČKOVÁ, Ivan OHLÍDAL and Jiří STUCHLÍK. Advanced modeling for optical characterization of amorphous hydrogenated silicon films. Thin Solid Films. Lausanne: Elsevier Science, 2013, vol. 541, Aug, p. 12-16. ISSN 0040-6090. Available from: https://dx.doi.org/10.1016/j.tsf.2013.04.129.
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Basic information
Original name Advanced modeling for optical characterization of amorphous hydrogenated silicon films
Authors FRANTA, Daniel (203 Czech Republic, guarantor, belonging to the institution), David NEČAS (203 Czech Republic, belonging to the institution), Lenka ZAJÍČKOVÁ (203 Czech Republic, belonging to the institution), Ivan OHLÍDAL (203 Czech Republic, belonging to the institution) and Jiří STUCHLÍK (203 Czech Republic).
Edition Thin Solid Films, Lausanne, Elsevier Science, 2013, 0040-6090.
Other information
Original language English
Type of outcome Article in a journal
Field of Study 10302 Condensed matter physics
Country of publisher Switzerland
Confidentiality degree is not subject to a state or trade secret
WWW URL
Impact factor Impact factor: 1.867
RIV identification code RIV/00216224:14740/13:00071634
Organization unit Central European Institute of Technology
Doi http://dx.doi.org/10.1016/j.tsf.2013.04.129
UT WoS 000323140600004
Keywords in English Ellipsometry; Spectrophotometry; a-Si:H; Urbach tail; Localized states; Sum rule
Tags podil, rivok
Tags International impact, Reviewed
Changed by Changed by: Olga Křížová, učo 56639. Changed: 6/4/2014 08:25.
Abstract
Amorphous hydrogenated silicon (a-Si:H) films deposited on glass and crystalline silicon substrates are analyzed using a multi-sample method combining ellipsometry and spectrophotometry in a spectral range of 0.046–8.9 eV, utilizing an analytical dispersion model based on parametrization of joint density of states and application of sum rule. This model includes all absorption processes from phonon absorption to core electron excitations. It is shown that if films deposited on both substrates are characterized together it is possible to study both phonon absorption and weak absorption processes below the band gap, i.e. the Urbach tail and absorption on localized states.
Links
ED1.1.00/02.0068, research and development projectName: CEITEC - central european institute of technology
ED2.1.00/03.0086, research and development projectName: Regionální VaV centrum pro nízkonákladové plazmové a nanotechnologické povrchové úpravy
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