3D Heteroepitaxy of Mismatched Semiconductors on Silicon

J 2014

3D Heteroepitaxy of Mismatched Semiconductors on Silicon

FALUB, Claudiu Valentin, Thomas KREILIGER, Fabio ISA, Alfonso TABOADA, Mojmír MEDUŇA et. al.

Basic information

Original name

3D Heteroepitaxy of Mismatched Semiconductors on Silicon

Name in Czech

3D heteroepitaxe nepřízpůsobených polovodičů na křemíku

Authors

FALUB, Claudiu Valentin (642 Romania), Thomas KREILIGER (756 Switzerland), Fabio ISA (380 Italy), Alfonso TABOADA (724 Spain), Mojmír MEDUŇA (203 Czech Republic, guarantor, belonging to the institution), Fabio PEZZOLI (380 Italy), Roberto BERGAMASCHINI (380 Italy), Anna MARZEGALLI (380 Italy), Elisabeth MÜLLER (756 Switzerland), Daniel CHRASTINA (826 United Kingdom of Great Britain and Northern Ireland), Giovanni ISELLA (380 Italy), Antonia NEELS (756 Switzerland), Philippe NIEDERMANN (756 Switzerland), Alex DOMMANN (756 Switzerland), Leo MIGLIO (380 Italy) and Hans VON KÄNEL (756 Switzerland)

Edition

Thin Solid Films, Lausanne (Switzerland), Elsevier, 2014, 0040-6090

Other information

Language

English

Type of outcome

Článek v odborném periodiku

Field of Study

10302 Condensed matter physics

Country of publisher

Netherlands

Confidentiality degree

není předmětem státního či obchodního tajemství

References:

URL

Impact factor

Impact factor: 1.759

RIV identification code

RIV/00216224:14740/14:00075285

Organization unit

Central European Institute of Technology

DOI

http://dx.doi.org/10.1016/j.tsf.2013.10.094

UT WoS

000333968300009

Keywords (in Czech)

monolitiocka integrace; epitaxní růst; Ge; GaAs; vzorkované Si substráty; skenovací rtg nanodifrakce; luminescence za pokojové teploty; rtg detektory

Keywords in English

Monolithic integration; Epitaxial growth; Ge; GaAs; Patterned Si substrates; Scanning X-ray nano-diffraction; Room-temperature photoluminescence; X-ray detectors

Abstract

ORIG CZ

V originále

We present a method for monolithically integrating mismatched semiconductor materials with Si, coined three-dimensional (3D) heteroepitaxy. The method comprises the replacement of conventional, continuous epilayers by dense arrays of strain- and defect-free, micron-sized crystals.

In Czech

Prezentujeme metodu pro monolitickou integraci nepřizpůsoobených polovodičových materiálů s Si, s šD epitaxí.

Links

CZ.1.07/2.4.00/17.0006, interní kód MU

Name: Research4Industry - Budování a rozvoj vědecko-výzkumné spolupráce s výzkumnými a průmyslovými partnery

Investor: Ministry of Education, Youth and Sports of the CR, 2.4 Partnership and networks

ED1.1.00/02.0068, research and development project

Name: CEITEC - central european institute of technology

EE2.3.20.0027, research and development project

Name: Posílení excelence vědeckých týmů v oblasti nano a mikrotechnologií

Citovat

FALUB, Claudiu Valentin, Thomas KREILIGER, Fabio ISA, Alfonso TABOADA, Mojmír MEDUŇA, Fabio PEZZOLI, Roberto BERGAMASCHINI, Anna MARZEGALLI, Elisabeth MÜLLER, Daniel CHRASTINA, Giovanni ISELLA, Antonia NEELS, Philippe NIEDERMANN, Alex DOMMANN, Leo MIGLIO and Hans VON KÄNEL. 3D Heteroepitaxy of Mismatched Semiconductors on Silicon. Thin Solid Films. Lausanne (Switzerland): Elsevier, 2014, vol. 557, 30 April 2014, p. 42-49. ISSN 0040-6090. Available from: https://dx.doi.org/10.1016/j.tsf.2013.10.094.

@article{1174235,
   author = {Falub, Claudiu Valentin and Kreiliger, Thomas and Isa, Fabio and Taboada, Alfonso and Meduňa, Mojmír and Pezzoli, Fabio and Bergamaschini, Roberto and Marzegalli, Anna and Müller, Elisabeth and Chrastina, Daniel and Isella, Giovanni and Neels, Antonia and Niedermann, Philippe and Dommann, Alex and Miglio, Leo and von Känel, Hans},
   article_location = {Lausanne (Switzerland)},
   article_number = {30 April 2014},
   doi = {http://dx.doi.org/10.1016/j.tsf.2013.10.094},
   keywords = {Monolithic integration; Epitaxial growth; Ge; GaAs; Patterned Si substrates; Scanning X-ray nano-diffraction; Room-temperature photoluminescence; X-ray detectors},
   language = {eng},
   issn = {0040-6090},
   journal = {Thin Solid Films},
   title = {3D Heteroepitaxy of Mismatched Semiconductors on Silicon},
   url = {http://www.sciencedirect.com/science/article/pii/S0040609013017057},
   volume = {557},
   year = {2014}
}

TY  - JOUR
ID  - 1174235
AU  - Falub, Claudiu Valentin - Kreiliger, Thomas - Isa, Fabio - Taboada, Alfonso - Meduňa, Mojmír - Pezzoli, Fabio - Bergamaschini, Roberto - Marzegalli, Anna - Müller, Elisabeth - Chrastina, Daniel - Isella, Giovanni - Neels, Antonia - Niedermann, Philippe - Dommann, Alex - Miglio, Leo - von Känel, Hans
PY  - 2014
TI  - 3D Heteroepitaxy of Mismatched Semiconductors on Silicon
JF  - Thin Solid Films
VL  - 557
IS  - 30 April 2014
SP  - 42-49
EP  - 42-49
PB  - Elsevier
SN  - 00406090
KW  - Monolithic integration
KW  - Epitaxial growth
KW  - Ge
KW  - GaAs
KW  - Patterned Si substrates
KW  - Scanning X-ray nano-diffraction
KW  - Room-temperature photoluminescence
KW  - X-ray detectors
UR  - http://www.sciencedirect.com/science/article/pii/S0040609013017057
L2  - http://www.sciencedirect.com/science/article/pii/S0040609013017057
N2  - We present a method for monolithically integrating mismatched semiconductor materials with Si, coined three-dimensional (3D) heteroepitaxy. The method comprises the replacement of conventional, continuous epilayers by dense arrays of strain- and defect-free, micron-sized crystals.
ER  -

FALUB, Claudiu Valentin, Thomas KREILIGER, Fabio ISA, Alfonso TABOADA, Mojmír MEDUŇA, Fabio PEZZOLI, Roberto BERGAMASCHINI, Anna MARZEGALLI, Elisabeth MÜLLER, Daniel CHRASTINA, Giovanni ISELLA, Antonia NEELS, Philippe NIEDERMANN, Alex DOMMANN, Leo MIGLIO and Hans VON KÄNEL. 3D Heteroepitaxy of Mismatched Semiconductors on Silicon. \textit{Thin Solid Films}. Lausanne (Switzerland): Elsevier, 2014, vol.~557, 30 April 2014, p.~42-49. ISSN~0040-6090. Available from: https://dx.doi.org/10.1016/j.tsf.2013.10.094.

Detailed Information on Publication Record