FALUB, Claudiu Valentin, Thomas KREILIGER, Fabio ISA, Alfonso TABOADA, Mojmír MEDUŇA, Fabio PEZZOLI, Roberto BERGAMASCHINI, Anna MARZEGALLI, Elisabeth MÜLLER, Daniel CHRASTINA, Giovanni ISELLA, Antonia NEELS, Philippe NIEDERMANN, Alex DOMMANN, Leo MIGLIO and Hans VON KÄNEL. 3D Heteroepitaxy of Mismatched Semiconductors on Silicon. Thin Solid Films. Lausanne (Switzerland): Elsevier, 2014, vol. 557, 30 April 2014, p. 42-49. ISSN 0040-6090. Available from: https://dx.doi.org/10.1016/j.tsf.2013.10.094.
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Basic information
Original name 3D Heteroepitaxy of Mismatched Semiconductors on Silicon
Name in Czech 3D heteroepitaxe nepřízpůsobených polovodičů na křemíku
Authors FALUB, Claudiu Valentin (642 Romania), Thomas KREILIGER (756 Switzerland), Fabio ISA (380 Italy), Alfonso TABOADA (724 Spain), Mojmír MEDUŇA (203 Czech Republic, guarantor, belonging to the institution), Fabio PEZZOLI (380 Italy), Roberto BERGAMASCHINI (380 Italy), Anna MARZEGALLI (380 Italy), Elisabeth MÜLLER (756 Switzerland), Daniel CHRASTINA (826 United Kingdom of Great Britain and Northern Ireland), Giovanni ISELLA (380 Italy), Antonia NEELS (756 Switzerland), Philippe NIEDERMANN (756 Switzerland), Alex DOMMANN (756 Switzerland), Leo MIGLIO (380 Italy) and Hans VON KÄNEL (756 Switzerland).
Edition Thin Solid Films, Lausanne (Switzerland), Elsevier, 2014, 0040-6090.
Other information
Original language English
Type of outcome Article in a journal
Field of Study 10302 Condensed matter physics
Country of publisher Netherlands
Confidentiality degree is not subject to a state or trade secret
WWW URL
Impact factor Impact factor: 1.759
RIV identification code RIV/00216224:14740/14:00075285
Organization unit Central European Institute of Technology
Doi http://dx.doi.org/10.1016/j.tsf.2013.10.094
UT WoS 000333968300009
Keywords (in Czech) monolitiocka integrace; epitaxní růst; Ge; GaAs; vzorkované Si substráty; skenovací rtg nanodifrakce; luminescence za pokojové teploty; rtg detektory
Keywords in English Monolithic integration; Epitaxial growth; Ge; GaAs; Patterned Si substrates; Scanning X-ray nano-diffraction; Room-temperature photoluminescence; X-ray detectors
Tags kontrola MP, rivok
Tags International impact, Reviewed
Changed by Changed by: Mgr. Mojmír Meduňa, Ph.D., učo 7898. Changed: 13/3/2018 10:44.
Abstract
We present a method for monolithically integrating mismatched semiconductor materials with Si, coined three-dimensional (3D) heteroepitaxy. The method comprises the replacement of conventional, continuous epilayers by dense arrays of strain- and defect-free, micron-sized crystals.
Abstract (in Czech)
Prezentujeme metodu pro monolitickou integraci nepřizpůsoobených polovodičových materiálů s Si, s šD epitaxí.
Links
CZ.1.07/2.4.00/17.0006, interní kód MUName: Research4Industry - Budování a rozvoj vědecko-výzkumné spolupráce s výzkumnými a průmyslovými partnery
Investor: Ministry of Education, Youth and Sports of the CR, 2.4 Partnership and networks
ED1.1.00/02.0068, research and development projectName: CEITEC - central european institute of technology
EE2.3.20.0027, research and development projectName: Posílení excelence vědeckých týmů v oblasti nano a mikrotechnologií
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