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@article{1174242,
author = {Meduňa, Mojmír and Falub, Claudiu Valentin and Isa, Fabio and Chrastina, Daniel and Kreiliger, Thomas and Isella, Giovanni and Taboada, Alfonso and Niedermann, Philippe and von Känel, Hans},
article_number = {4},
doi = {http://dx.doi.org/10.1166/qm.2014.1127},
keywords = {defect-free; epitaxial ge-crystals; lattice mismatch; si substrates; thermal expansion mismatch; x-ray nanodiffraction},
language = {eng},
issn = {2164-7615},
journal = {Quantum Matter},
title = {X-Ray Nano-Diffraction on Epitaxial Crystals},
url = {http://www.ingentaconnect.com/content/asp/qm/2014/00000003/00000004/art00002},
volume = {3},
year = {2014}
}
TY - JOUR
ID - 1174242
AU - Meduňa, Mojmír - Falub, Claudiu Valentin - Isa, Fabio - Chrastina, Daniel - Kreiliger, Thomas - Isella, Giovanni - Taboada, Alfonso - Niedermann, Philippe - von Känel, Hans
PY - 2014
TI - X-Ray Nano-Diffraction on Epitaxial Crystals
JF - Quantum Matter
VL - 3
IS - 4
SP - 290-296
EP - 290-296
PB - American Scientific Publishers
SN - 21647615
KW - defect-free
KW - epitaxial ge-crystals
KW - lattice mismatch
KW - si substrates
KW - thermal expansion mismatch
KW - x-ray nanodiffraction
UR - http://www.ingentaconnect.com/content/asp/qm/2014/00000003/00000004/art00002
N2 - The concept of growing epitaxial Ge and SiGe crystals onto tall Si pillars may provide a means for solving the problems associated with lattice parameter and thermal expansion coefficient mismatch, i.e., dislocations, wafer bowing and cracks. For carefully tuned epitaxial growth conditions the lateral expansion of crystals stops once nearest neighbors get sufficiently close. We have carried out scanning nano-diffraction experiments at the ID01 beam-line of the European Synchrotron Radiation Facility (ESRF) in Grenoble on the resulting space-filling arrays of micron-sized crystals to assess their structural properties and crystal quality. Elastic relaxation of the thermal strain causes lattice bending close to the Si interface, while the dislocation network is responsible for minute tilts of the crystals as a whole. To exclude any interference from nearest neighbors, individual Ge crystals were isolated first by chemical etching followed by micro-manipulation inside a scanning electron microscope. This permitted us to scan an X-ray beam, focused to a spot a few hundreds of nm in size, along the height of a single crystal and to record three-dimensional reciprocal space maps at chosen heights. The resolution limited width of the scattered X-ray beams reveals that the epitaxial structures evolve into perfect single crystals sufficiently far away from the heavily dislocated interface.
ER -
MEDUŇA, Mojmír, Claudiu Valentin FALUB, Fabio ISA, Daniel CHRASTINA, Thomas KREILIGER, Giovanni ISELLA, Alfonso TABOADA, Philippe NIEDERMANN and Hans VON KÄNEL. X-Ray Nano-Diffraction on Epitaxial Crystals. \textit{Quantum Matter}. American Scientific Publishers, vol.~3, No~4, p.~290-296. ISSN~2164-7615. doi:10.1166/qm.2014.1127. 2014.
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