Detailed Information on Publication Record
2014
X-Ray Nano-Diffraction on Epitaxial Crystals
MEDUŇA, Mojmír, Claudiu Valentin FALUB, Fabio ISA, Daniel CHRASTINA, Thomas KREILIGER et. al.Basic information
Original name
X-Ray Nano-Diffraction on Epitaxial Crystals
Name in Czech
Rtg nano-difrakce na epitaxních krystalech
Authors
MEDUŇA, Mojmír (203 Czech Republic, guarantor, belonging to the institution), Claudiu Valentin FALUB (642 Romania), Fabio ISA (380 Italy), Daniel CHRASTINA (826 United Kingdom of Great Britain and Northern Ireland), Thomas KREILIGER (756 Switzerland), Giovanni ISELLA (380 Italy), Alfonso TABOADA (724 Spain), Philippe NIEDERMANN (756 Switzerland) and Hans VON KÄNEL (756 Switzerland)
Edition
Quantum Matter, American Scientific Publishers, 2014, 2164-7615
Other information
Language
English
Type of outcome
Článek v odborném periodiku
Field of Study
10302 Condensed matter physics
Country of publisher
United States of America
Confidentiality degree
není předmětem státního či obchodního tajemství
References:
RIV identification code
RIV/00216224:14740/14:00075287
Organization unit
Central European Institute of Technology
Keywords (in Czech)
bezdefektní; epitaxní Ge krystaly; nepřizpůsobená mřížka; nepřizpůsobená teplotní roztažnost; rtg nanodifrakce
Keywords in English
defect-free; epitaxial ge-crystals; lattice mismatch; si substrates; thermal expansion mismatch; x-ray nanodiffraction
Tags
Tags
International impact, Reviewed
Změněno: 13/3/2018 10:48, Mgr. Mojmír Meduňa, Ph.D.
V originále
The concept of growing epitaxial Ge and SiGe crystals onto tall Si pillars may provide a means for solving the problems associated with lattice parameter and thermal expansion coefficient mismatch, i.e., dislocations, wafer bowing and cracks. For carefully tuned epitaxial growth conditions the lateral expansion of crystals stops once nearest neighbors get sufficiently close. We have carried out scanning nano-diffraction experiments at the ID01 beam-line of the European Synchrotron Radiation Facility (ESRF) in Grenoble on the resulting space-filling arrays of micron-sized crystals to assess their structural properties and crystal quality. Elastic relaxation of the thermal strain causes lattice bending close to the Si interface, while the dislocation network is responsible for minute tilts of the crystals as a whole. To exclude any interference from nearest neighbors, individual Ge crystals were isolated first by chemical etching followed by micro-manipulation inside a scanning electron microscope. This permitted us to scan an X-ray beam, focused to a spot a few hundreds of nm in size, along the height of a single crystal and to record three-dimensional reciprocal space maps at chosen heights. The resolution limited width of the scattered X-ray beams reveals that the epitaxial structures evolve into perfect single crystals sufficiently far away from the heavily dislocated interface.
In Czech
Koncept růstu epitaxních Ge a SiGe krystalů na vysokých Si pilířích může poskytovat řešení problémů spojených s rozdílním mřížkovým parametrem a tepelnou roztažností, dislokace, ohyb desek a praskání. Omezená šířka rozlišení svazku odhaluje že epitaxní struktury se vyvinou v perfektní dokonalé krystaly daleko do tžce narušeného povrchu.
Links
| CZ.1.05/1.1.00/02.0068, interní kód MU |
| ||
| CZ.1.07/2.4.00/17.0006, interní kód MU |
| ||
| ED1.1.00/02.0068, research and development project |
|