Detailed Information on Publication Record
2014
Raman and interband optical spectra of epitaxial layers of the topological insulators Bi2Te3 and Bi2Se3 on BaF2 substrates
HUMLÍČEK, Josef, Dušan HEMZAL, Adam DUBROKA, Ondřej CAHA, Hubert STEINER et. al.Basic information
Original name
Raman and interband optical spectra of epitaxial layers of the topological insulators Bi2Te3 and Bi2Se3 on BaF2 substrates
Name in Czech
Ramanská a mezipásová optická spektra epitaxních vrstev topologických izolátorů Bi2Te3 a Bi2Se3 na substrátech BaF2
Authors
HUMLÍČEK, Josef (203 Czech Republic, guarantor, belonging to the institution), Dušan HEMZAL (203 Czech Republic, belonging to the institution), Adam DUBROKA (203 Czech Republic, belonging to the institution), Ondřej CAHA (203 Czech Republic, belonging to the institution), Hubert STEINER (40 Austria), Gunther BAUER (40 Austria) and Guenther SPRINGHOLZ (40 Austria)
Edition
Physica Scripta, Bristol (England), Royal Swedish Academy of Sciences, 2014, 0031-8949
Other information
Language
English
Type of outcome
Článek v odborném periodiku
Field of Study
10302 Condensed matter physics
Country of publisher
United Kingdom of Great Britain and Northern Ireland
Confidentiality degree
není předmětem státního či obchodního tajemství
References:
Impact factor
Impact factor: 1.126
RIV identification code
RIV/00216224:14740/14:00074283
Organization unit
Central European Institute of Technology
UT WoS
000349832200008
Keywords in English
bismuth tellurides; bismuth selenides; Raman spectra; ellipsometric spectra; epitaxial layers
Tags
Tags
International impact, Reviewed
Změněno: 13/3/2018 16:09, doc. Mgr. Adam Dubroka, Ph.D.
V originále
We report results of Raman and ellipsometric spectroscopy of the topological insulators Bi2Te3 and Bi2Se3 grown by molecular beam epitaxy on BaF2 (111) substrates. Surfaces and interfaces of the films are probed by Raman scattering from the front and back sides of the samples, which is possible owing to the transparent substrate. Surface modifications induced by intense illumination with exciting laser light have been detected, with excess tellurium at the surface during and after exposure. We also report data for thin epilayers containing a fractional number of unit cells and/or incomplete Bi2Te3 and Bi2Se3 quintuples. We have used spectroellipsometric measurements to obtain response functions and have derived the penetration depth of light in the 1.0–6.5 eV range.
In Czech
We report results of Raman and ellipsometric spectroscopy of the topological insulators Bi2Te3 and Bi2Se3 grown by molecular beam epitaxy on BaF2 (111) substrates. Surfaces and interfaces of the films are probed by Raman scattering from the front and back sides of the samples, which is possible owing to the transparent substrate. Surface modifications induced by intense illumination with exciting laser light have been detected, with excess tellurium at the surface during and after exposure. We also report data for thin epilayers containing a fractional number of unit cells and/or incomplete Bi2Te3 and Bi2Se3 quintuples. We have used spectroellipsometric measurements to obtain response functions and have derived the penetration depth of light in the 1.0–6.5 eV range.
Links
| ED1.1.00/02.0068, research and development project |
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| GAP204/12/0595, research and development project |
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