HUMLÍČEK, Josef, Dušan HEMZAL, Adam DUBROKA, Ondřej CAHA, Hubert STEINER, Gunther BAUER and Guenther SPRINGHOLZ. Raman and interband optical spectra of epitaxial layers of the topological insulators Bi2Te3 and Bi2Se3 on BaF2 substrates. Physica Scripta. Bristol (England): Royal Swedish Academy of Sciences, 2014, T162, September, p. "nestránkováno", 4 pp. ISSN 0031-8949. Available from: https://dx.doi.org/10.1088/0031-8949/2014/T162/014007.
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Basic information
Original name Raman and interband optical spectra of epitaxial layers of the topological insulators Bi2Te3 and Bi2Se3 on BaF2 substrates
Name in Czech Ramanská a mezipásová optická spektra epitaxních vrstev topologických izolátorů Bi2Te3 a Bi2Se3 na substrátech BaF2
Authors HUMLÍČEK, Josef (203 Czech Republic, guarantor, belonging to the institution), Dušan HEMZAL (203 Czech Republic, belonging to the institution), Adam DUBROKA (203 Czech Republic, belonging to the institution), Ondřej CAHA (203 Czech Republic, belonging to the institution), Hubert STEINER (40 Austria), Gunther BAUER (40 Austria) and Guenther SPRINGHOLZ (40 Austria).
Edition Physica Scripta, Bristol (England), Royal Swedish Academy of Sciences, 2014, 0031-8949.
Other information
Original language English
Type of outcome Article in a journal
Field of Study 10302 Condensed matter physics
Country of publisher United Kingdom of Great Britain and Northern Ireland
Confidentiality degree is not subject to a state or trade secret
WWW URL
Impact factor Impact factor: 1.126
RIV identification code RIV/00216224:14740/14:00074283
Organization unit Central European Institute of Technology
Doi http://dx.doi.org/10.1088/0031-8949/2014/T162/014007
UT WoS 000349832200008
Keywords in English bismuth tellurides; bismuth selenides; Raman spectra; ellipsometric spectra; epitaxial layers
Tags kontrola MP, rivok
Tags International impact, Reviewed
Changed by Changed by: doc. Mgr. Adam Dubroka, Ph.D., učo 4408. Changed: 13/3/2018 16:09.
Abstract
We report results of Raman and ellipsometric spectroscopy of the topological insulators Bi2Te3 and Bi2Se3 grown by molecular beam epitaxy on BaF2 (111) substrates. Surfaces and interfaces of the films are probed by Raman scattering from the front and back sides of the samples, which is possible owing to the transparent substrate. Surface modifications induced by intense illumination with exciting laser light have been detected, with excess tellurium at the surface during and after exposure. We also report data for thin epilayers containing a fractional number of unit cells and/or incomplete Bi2Te3 and Bi2Se3 quintuples. We have used spectroellipsometric measurements to obtain response functions and have derived the penetration depth of light in the 1.0–6.5 eV range.
Abstract (in Czech)
We report results of Raman and ellipsometric spectroscopy of the topological insulators Bi2Te3 and Bi2Se3 grown by molecular beam epitaxy on BaF2 (111) substrates. Surfaces and interfaces of the films are probed by Raman scattering from the front and back sides of the samples, which is possible owing to the transparent substrate. Surface modifications induced by intense illumination with exciting laser light have been detected, with excess tellurium at the surface during and after exposure. We also report data for thin epilayers containing a fractional number of unit cells and/or incomplete Bi2Te3 and Bi2Se3 quintuples. We have used spectroellipsometric measurements to obtain response functions and have derived the penetration depth of light in the 1.0–6.5 eV range.
Links
ED1.1.00/02.0068, research and development projectName: CEITEC - central european institute of technology
GAP204/12/0595, research and development projectName: Elektronové a strukturní vlastnosti trojrozměrných topologických izolantů
Investor: Czech Science Foundation
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