SKÁCELOVÁ, Dana, Petr SLÁDEK, Pavel SŤAHEL, Lukáš PAWERA, Martin HANIČINEC, Jürgen MEISCHNER and Mirko ČERNÁK. Properties of atmospheric pressure plasma oxidized layers on silicon wafers. Open Chemistry. Varšava, Polsko: De Gruyter, 2015, vol. 13, No 1, p. 376-381. ISSN 2391-5420. Available from: https://dx.doi.org/10.1515/chem-2015-0047.
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Basic information
Original name Properties of atmospheric pressure plasma oxidized layers on silicon wafers
Authors SKÁCELOVÁ, Dana (203 Czech Republic, guarantor, belonging to the institution), Petr SLÁDEK (203 Czech Republic, belonging to the institution), Pavel SŤAHEL (203 Czech Republic, belonging to the institution), Lukáš PAWERA (203 Czech Republic, belonging to the institution), Martin HANIČINEC (203 Czech Republic, belonging to the institution), Jürgen MEISCHNER (276 Germany) and Mirko ČERNÁK (703 Slovakia, belonging to the institution).
Edition Open Chemistry, Varšava, Polsko, De Gruyter, 2015, 2391-5420.
Other information
Original language English
Type of outcome Article in a journal
Field of Study 10305 Fluids and plasma physics
Country of publisher Poland
Confidentiality degree is not subject to a state or trade secret
RIV identification code RIV/00216224:14310/15:00082344
Organization unit Faculty of Science
Doi http://dx.doi.org/10.1515/chem-2015-0047
UT WoS 000355403100045
Keywords in English Amorphous silicon oxide; atmospheric pressure plasma; oxidation; DCSBD
Tags AKR, rivok
Tags International impact, Reviewed
Changed by Changed by: Dana Nesnídalová, učo 831. Changed: 3/2/2020 15:11.
Abstract
In this research a new process of plasma oxidation of crystalline silicon at room temperature is studied. The plasma oxidation was carried out using Diffuse Coplanar Surface Barrier Discharge (DCSBD) operating in ambient air and oxygen at atmospheric pressure. The influence of exposition time, plasma parameters and crystallographic orientation of silicon on oxidized layers and their dielectric properties were investigated. Thickness, structure and morphology of these layers were studied by ellipsometry, infrared absorption spectroscopy and scanning electron microscopy. During the treatment time, from 1 to 30 minutes, oxidized layers were obtained with thickness from 1 to 10 nm. Their roughness depends on the crystallographic orientation of silicon surface and exposure time. Electrical parameters of the prepared layers indicate the presence of an intermediate layer between silicon substrate and the oxidized layer.
Links
ED2.1.00/03.0086, research and development projectName: Regionální VaV centrum pro nízkonákladové plazmové a nanotechnologické povrchové úpravy
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