Properties of atmospheric pressure plasma oxidized layers on
silicon wafers

J 2015

Properties of atmospheric pressure plasma oxidized layers on silicon wafers

SKÁCELOVÁ, Dana, Petr SLÁDEK, Pavel SŤAHEL, Lukáš PAWERA, Martin HANIČINEC et. al.

Basic information

Original name

Properties of atmospheric pressure plasma oxidized layers on silicon wafers

Authors

SKÁCELOVÁ, Dana (203 Czech Republic, guarantor, belonging to the institution), Petr SLÁDEK (203 Czech Republic, belonging to the institution), Pavel SŤAHEL (203 Czech Republic, belonging to the institution), Lukáš PAWERA (203 Czech Republic, belonging to the institution), Martin HANIČINEC (203 Czech Republic, belonging to the institution), Jürgen MEISCHNER (276 Germany) and Mirko ČERNÁK (703 Slovakia, belonging to the institution)

Edition

Open Chemistry, Varšava, Polsko, De Gruyter, 2015, 2391-5420

Other information

Language

English

Type of outcome

Článek v odborném periodiku

Field of Study

10305 Fluids and plasma physics

Country of publisher

Poland

Confidentiality degree

není předmětem státního či obchodního tajemství

RIV identification code

RIV/00216224:14310/15:00082344

Organization unit

Faculty of Science

DOI

http://dx.doi.org/10.1515/chem-2015-0047

UT WoS

000355403100045

Keywords in English

Amorphous silicon oxide; atmospheric pressure plasma; oxidation; DCSBD

Abstract

V originále

In this research a new process of plasma oxidation of crystalline silicon at room temperature is studied. The plasma oxidation was carried out using Diffuse Coplanar Surface Barrier Discharge (DCSBD) operating in ambient air and oxygen at atmospheric pressure. The influence of exposition time, plasma parameters and crystallographic orientation of silicon on oxidized layers and their dielectric properties were investigated. Thickness, structure and morphology of these layers were studied by ellipsometry, infrared absorption spectroscopy and scanning electron microscopy. During the treatment time, from 1 to 30 minutes, oxidized layers were obtained with thickness from 1 to 10 nm. Their roughness depends on the crystallographic orientation of silicon surface and exposure time. Electrical parameters of the prepared layers indicate the presence of an intermediate layer between silicon substrate and the oxidized layer.

Links

ED2.1.00/03.0086, research and development project

Name: Regionální VaV centrum pro nízkonákladové plazmové a nanotechnologické povrchové úpravy

Citovat

SKÁCELOVÁ, Dana, Petr SLÁDEK, Pavel SŤAHEL, Lukáš PAWERA, Martin HANIČINEC, Jürgen MEISCHNER and Mirko ČERNÁK. Properties of atmospheric pressure plasma oxidized layers on silicon wafers. Open Chemistry. Varšava, Polsko: De Gruyter, 2015, vol. 13, No 1, p. 376-381. ISSN 2391-5420. Available from: https://dx.doi.org/10.1515/chem-2015-0047.

@article{1220336,
   author = {Skácelová, Dana and Sládek, Petr and Sťahel, Pavel and Pawera, Lukáš and Haničinec, Martin and Meischner, Jürgen and Černák, Mirko},
   article_location = {Varšava, Polsko},
   article_number = {1},
   doi = {http://dx.doi.org/10.1515/chem-2015-0047},
   keywords = {Amorphous silicon oxide; atmospheric pressure plasma; oxidation; DCSBD},
   language = {eng},
   issn = {2391-5420},
   journal = {Open Chemistry},
   title = {Properties of atmospheric pressure plasma oxidized layers on silicon wafers},
   volume = {13},
   year = {2015}
}

TY  - JOUR
ID  - 1220336
AU  - Skácelová, Dana - Sládek, Petr - Sťahel, Pavel - Pawera, Lukáš - Haničinec, Martin - Meischner, Jürgen - Černák, Mirko
PY  - 2015
TI  - Properties of atmospheric pressure plasma oxidized layers on silicon wafers
JF  - Open Chemistry
VL  - 13
IS  - 1
SP  - 376-381
EP  - 376-381
PB  - De Gruyter
SN  - 23915420
KW  - Amorphous silicon oxide
KW  - atmospheric pressure plasma
KW  - oxidation
KW  - DCSBD
N2  - In this research a new process of plasma oxidation of crystalline silicon at room temperature is studied. The plasma oxidation was carried out using Diffuse Coplanar Surface Barrier Discharge (DCSBD) operating in ambient air and oxygen at atmospheric pressure. The influence of exposition time, plasma parameters and crystallographic orientation of silicon on oxidized layers and their dielectric properties were investigated. Thickness, structure and morphology of these layers were studied by ellipsometry, infrared absorption spectroscopy and scanning electron microscopy. During the treatment time, from 1 to 30 minutes, oxidized layers were obtained with thickness from 1 to 10 nm. Their roughness depends on the crystallographic orientation of silicon surface and exposure time. Electrical parameters of the prepared layers indicate the presence of an intermediate layer between silicon substrate and the oxidized layer.
ER  -

SKÁCELOVÁ, Dana, Petr SLÁDEK, Pavel SŤAHEL, Lukáš PAWERA, Martin HANIČINEC, Jürgen MEISCHNER and Mirko ČERNÁK. Properties of atmospheric pressure plasma oxidized layers on silicon wafers. \textit{Open Chemistry}. Varšava, Polsko: De Gruyter, 2015, vol.~13, No~1, p.~376-381. ISSN~2391-5420. Available from: https://dx.doi.org/10.1515/chem-2015-0047.

Detailed Information on Publication Record