J 2014

Structure and composition of bismuth telluride topological insulators grown by molecular beam epitaxy

STEINER, Hubert, Valentine VOLOBUEV, Ondřej CAHA, Guenther BAUER, Günter SPRINGHOLZ et. al.

Basic information

Original name

Structure and composition of bismuth telluride topological insulators grown by molecular beam epitaxy

Authors

STEINER, Hubert (40 Austria), Valentine VOLOBUEV (40 Austria), Ondřej CAHA (203 Czech Republic, guarantor, belonging to the institution), Guenther BAUER (40 Austria), Günter SPRINGHOLZ (40 Austria) and Václav HOLÝ (203 Czech Republic)

Edition

Journal of Applied Crystallography, Hoboken, WILEY-BLACKWELL, 2014, 0021-8898

Other information

Language

English

Type of outcome

Článek v odborném periodiku

Field of Study

10302 Condensed matter physics

Country of publisher

United States of America

Confidentiality degree

není předmětem státního či obchodního tajemství

References:

Impact factor

Impact factor: 3.984

RIV identification code

RIV/00216224:14740/14:00079372

Organization unit

Central European Institute of Technology

DOI

UT WoS

000345877900010

Keywords in English

X-RAY-DIFFRACTION; SINGLE DIRAC CONE; SURFACE-STATES; BI2TE3 FILMS; THIN-FILMS; PHASES; SYSTEM; BITE; SI

Tags

Tags

International impact, Reviewed
Změněno: 4/3/2015 14:55, Martina Prášilová

Abstract

V originále

The structure and composition of Bi2Te3-delta topological insulator layers grown by molecular beam epitaxy is studied as a function of beam flux composition. It is demonstrated that, depending on the Te/Bi2Te3 flux ratio, different layer compositions are obtained corresponding to a Te deficit delta varying between 0 and 1. On the basis of X-ray diffraction analysis and a theoretical description using a random stacking model, it is shown that for delta >= 0 the structure of the epilayers is described well by a random stacking of Te-Bi-Te-Bi-Te quintuple layers and Bi-Bi bilayers sharing the same basic hexagonal lattice structure. The random stacking model accounts for the observed surface step structure of the layers and compares very well with the measured X-ray data, from which the lattice parameters a and c as a function of the chemical composition were deduced. In particular, the in-plane lattice parameter a is found to continuously increase and the average distance of the (0001) hexagonal lattice planes is found to decrease from the Bi2Te3 to the BiTe phase. Moreover, the lattice plane distances agree well with the linear interpolation between the Bi2Te3 and BiTe values taking the strain in the epilayers into account. Thus, the chemical composition Bi2Te3-delta can be directly determined by X-ray diffraction. From analysis of the X-ray diffraction data, quantitative information on the randomness of the stacking sequence of the Bi and Te layers is obtained. According to these findings, the layers represent random one-dimensional alloys of Te-Bi-Te-Bi-Te quintuple and Bi-Bi bilayers rather than a homologous series of ordered compounds.