FRANTA, Daniel, David NEČAS, Lenka ZAJÍČKOVÁ and Ivan OHLÍDAL. Dispersion model of two-phonon absorption: application to c-Si. OPTICAL MATERIALS EXPRESS. WASHINGTON: OPTICAL SOC AMER, vol. 4, No 8, p. 1641-1656. ISSN 2159-3930. doi:10.1364/OME.4.001641. 2014.
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Basic information
Original name Dispersion model of two-phonon absorption: application to c-Si
Authors FRANTA, Daniel (203 Czech Republic, guarantor, belonging to the institution), David NEČAS (203 Czech Republic, belonging to the institution), Lenka ZAJÍČKOVÁ (203 Czech Republic, belonging to the institution) and Ivan OHLÍDAL (203 Czech Republic, belonging to the institution).
Edition OPTICAL MATERIALS EXPRESS, WASHINGTON, OPTICAL SOC AMER, 2014, 2159-3930.
Other information
Original language English
Type of outcome Article in a journal
Field of Study 10306 Optics
Country of publisher United States of America
Confidentiality degree is not subject to a state or trade secret
WWW URL
Impact factor Impact factor: 2.844
RIV identification code RIV/00216224:14310/14:00073318
Organization unit Faculty of Science
Doi http://dx.doi.org/10.1364/OME.4.001641
UT WoS 000341647900016
Keywords in English HFO2 THIN-FILMS; LATTICE ABSORPTION; OPTICAL-PROPERTIES; SILICON; DEPOSITION
Tags AKR, kontrola MP, podil, rivok
Tags International impact, Reviewed
Changed by Changed by: Martina Prášilová, učo 342282. Changed: 18/3/2015 10:02.
Abstract
A dispersion model describing two-phonon absorption is developed using several simplifications of the quasiparticle approach. The dielectric response is constructed from absorption bands corresponding to individual additive and subtractive combinations of phonon branches. The model also includes thermal effects, changes of the transition strength with temperature, originating in Bose-Einstein statistics, and the shift of phonon frequencies accompanying thermal expansion. The model is applied to the analysis of experimental data measured in the IR range on crystalline silicon. The modeled spectral dependencies of optical constants are capable of describing all features in the transmittance spectra 70-1000 cm(-1) observable at 300K for float-zone silicon. The phonon frequencies in the points of symmetry are obtained independently in good agreement with ab initio calculations. The model of thermal effects is verified using ellipsometric measurements 300-1000 cm(-1) in the temperature range of 300-500 K. The agreement between the modeled and experimental data is good, except for the spectral range 750-850 cm(-1), in which a better agreement at temperatures above 300K would require including the three-phonon absorption. The analysis provides a reliable value of the thermal coefficient describing the phonon frequency shift and proves that changes of structure broadening with temperature are negligible within the temperature range of 300-500 K. (C) 2014 Optical Society of America
Links
ED1.1.00/02.0068, research and development projectName: CEITEC - central european institute of technology
ED2.1.00/03.0086, research and development projectName: Regionální VaV centrum pro nízkonákladové plazmové a nanotechnologické povrchové úpravy
TA02010784, research and development projectName: Optimalizace vrstevnatých systémů používaných v optickém průmyslu
Investor: Technology Agency of the Czech Republic
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