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@misc{1232868,
author = {Caha, Ondřej and Wang, Chennan and Münz, Filip and Humlíček, Josef},
address = {Masarykova univerzita, Brno},
keywords = {layered structures; GaN; AlGaN; silicon},
language = {eng},
location = {Masarykova univerzita, Brno},
publisher = {ONSEMI},
title = {Metrology of epitaxial layers *GaN},
year = {2014}
}
TY - GEN
ID - 1232868
AU - Caha, Ondřej - Wang, Chennan - Münz, Filip - Humlíček, Josef
PY - 2014
TI - Metrology of epitaxial layers *GaN
VL - Report LDDA 2014
PB - ONSEMI
CY - Masarykova univerzita, Brno
KW - layered structures
KW - GaN
KW - AlGaN
KW - silicon
N2 - *Utilization of characterization methods for development of *Al/GaN epitaxial technology. Evaluating the feasibility of MOCVD epitaxial growth of HEMT materials including structure characteristics and characterization methods. · Perform characterization of optical properties of *Al/GaN layered system and propose metrology for layer thickness estimation. · Perform correlation of measurement with FTIR system. · Develop x-ray methods for characterization of defects in epitaxial *Al/GaN layers. · Develop x-ray methods for fast analysis of composition of epitaxial *Al/GaN layers.
ER -
CAHA, Ondřej, Chennan WANG, Filip MÜNZ a Josef HUMLÍČEK. \textit{Metrology of epitaxial layers *GaN}. Masarykova univerzita, Brno: ONSEMI. 67 s. Report LDDA 2014. 2014.
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