MÜNZ, Filip and Josef HUMLÍČEK. Imaging in NIR *SOI, GaN. Masarykova univerzita, Brno: ONSEMI, 2014, 20 pp. Report LDDA 2014.
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Basic information
Original name Imaging in NIR *SOI, GaN
Name in Czech Zobrazování v NIR *SOI, GaN
Authors MÜNZ, Filip (203 Czech Republic, belonging to the institution) and Josef HUMLÍČEK (203 Czech Republic, guarantor, belonging to the institution).
Edition Masarykova univerzita, Brno, 20 pp. Report LDDA 2014, 2014.
Publisher ONSEMI
Other information
Original language English
Type of outcome Research report
Field of Study 10302 Condensed matter physics
Country of publisher Czech Republic
Confidentiality degree contents are subject to a state secret
RIV identification code RIV/00216224:14740/14:00079946
Organization unit Central European Institute of Technology
Keywords in English layered structures; SOI; GaN; AlGaN; silicon
Tags KONTROLA OK, rivok
Changed by Changed by: Olga Křížová, učo 56639. Changed: 10/4/2015 15:29.
Abstract
*Tools for imaging of interferences in thin layers. Completed prototype of equipment for imaging of interferences on 150 mm GaN on Si and 150 and 200 mm SOI wafers. Validate the method and equipment with analysis of SOI and GaN wafers (comparison of thickness maps with FTIR and SEM values. Prepare basic technical documentation, working instructions, recipes and metrological instructions.
Abstract (in Czech)
*Nástroje pro zobrazování interferencí v tenkých vrstvách. Prototyp zařízení pro 150 mm GaN na Si a 150 a 200 mm SOI wafery.
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