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@misc{1232888, author = {Münz, Filip and Humlíček, Josef}, address = {Masarykova univerzita, Brno}, keywords = {layered structures; SOI; GaN; AlGaN; silicon}, language = {eng}, location = {Masarykova univerzita, Brno}, publisher = {ONSEMI}, title = {Imaging in NIR *SOI, GaN}, year = {2014} }
TY - GEN ID - 1232888 AU - Münz, Filip - Humlíček, Josef PY - 2014 TI - Imaging in NIR *SOI, GaN VL - Report LDDA 2014 PB - ONSEMI CY - Masarykova univerzita, Brno KW - layered structures KW - SOI KW - GaN KW - AlGaN KW - silicon N2 - *Tools for imaging of interferences in thin layers. Completed prototype of equipment for imaging of interferences on 150 mm GaN on Si and 150 and 200 mm SOI wafers. Validate the method and equipment with analysis of SOI and GaN wafers (comparison of thickness maps with FTIR and SEM values. Prepare basic technical documentation, working instructions, recipes and metrological instructions. ER -
MÜNZ, Filip and Josef HUMLÍČEK. \textit{Imaging in NIR *SOI, GaN}. Masarykova univerzita, Brno: ONSEMI, 2014, 20 pp. Report LDDA 2014.
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