Detailed Information on Publication Record
2016
Tetrakis(trimethylsilyloxy)silane for nanostructured SiO2-like films deposited by PECVD at atmospheric pressure
SCHÄFER, Jan, Jaroslav HNILICA, Jiří ŠPERKA, Antje QUADE, Vít KUDRLE et. al.Basic information
Original name
Tetrakis(trimethylsilyloxy)silane for nanostructured SiO2-like films deposited by PECVD at atmospheric pressure
Authors
SCHÄFER, Jan (203 Czech Republic), Jaroslav HNILICA (203 Czech Republic, belonging to the institution), Jiří ŠPERKA (203 Czech Republic, belonging to the institution), Antje QUADE (276 Germany), Vít KUDRLE (203 Czech Republic, guarantor, belonging to the institution), Rüdiger FOEST (276 Germany), Jiří VODÁK (203 Czech Republic, belonging to the institution) and Lenka ZAJÍČKOVÁ (203 Czech Republic, belonging to the institution)
Edition
Surface and Coatings Technology, 2016, 0257-8972
Other information
Language
English
Type of outcome
Článek v odborném periodiku
Field of Study
10305 Fluids and plasma physics
Country of publisher
United Kingdom of Great Britain and Northern Ireland
Confidentiality degree
není předmětem státního či obchodního tajemství
Impact factor
Impact factor: 2.589
RIV identification code
RIV/00216224:14310/16:00087594
Organization unit
Faculty of Science
UT WoS
000376834700017
Keywords in English
Tetrakis(trimethylsilyloxy)silane; Tetrakis(trimethylsiloxy)silane; Plasma jet; Silicon dioxide
Tags
International impact, Reviewed
Změněno: 26/2/2019 07:02, doc. Mgr. Jaroslav Hnilica, Ph.D.
Abstract
V originále
We performed the thin films deposition using atmospheric pressure plasma enhanced chemical vapour deposition (AP-PECVD) by means of a radiofrequency and a microwave plasma jets operating with mixtures of argon and tetrakis(trimethylsilyloxy)silane (TTMS).
Links
ED1.1.00/02.0068, research and development project |
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ED2.1.00/03.0086, research and development project |
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LO1411, research and development project |
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TE02000011, research and development project |
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