Three-dimensional Ge/SiGe multiple quantum wells deposited on Si(001) and Si(111) patterned substrates

ISA, Fabio, Fabio PEZZOLI, G. ISELLA, Mojmír MEDUŇA, C.V. FALUB, E. MÜLLER, Thomas KREILIGER, A. G. TABOADA, Hans VON KAENEL and Leo MIGLIO. Three-dimensional Ge/SiGe multiple quantum wells deposited on Si(001) and Si(111) patterned substrates. Semiconductor Science and Technology. Bristol (Velká Britanie): IOP Publishing Ltd, 2015, vol. 30, No 10, p. nestránkováno, 9 pp. ISSN 0268-1242. Available from: https://dx.doi.org/10.1088/0268-1242/30/10/105001.

Basic information

• Original name: Three-dimensional Ge/SiGe multiple quantum wells deposited on Si(001) and Si(111) patterned substrates
• Name in Czech: 3D Ge/SiGe mnohonásobné kvantové jámy deponované na Si(001) a Si(111) vzorkované substráty
• Authors: ISA, Fabio (380 Italy), Fabio PEZZOLI (380 Italy), G. ISELLA (380 Italy), Mojmír MEDUŇA (203 Czech Republic, guarantor, belonging to the institution), C.V. FALUB (642 Romania), E. MÜLLER (756 Switzerland), Thomas KREILIGER (756 Switzerland), A. G. TABOADA (724 Spain), Hans VON KAENEL (756 Switzerland) and Leo MIGLIO (380 Italy).
• Edition: Semiconductor Science and Technology, Bristol (Velká Britanie), IOP Publishing Ltd, 2015, 0268-1242.

Other information

• Original language: English
• Type of outcome: Article in a journal
• Field of Study: 10302 Condensed matter physics
• Country of publisher: United Kingdom of Great Britain and Northern Ireland
• Confidentiality degree: is not subject to a state or trade secret
• Impact factor: Impact factor: 2.098
• RIV identification code: RIV/00216224:14740/15:00085353
• Organization unit: Central European Institute of Technology
• Doi: http://dx.doi.org/10.1088/0268-1242/30/10/105001
• UT WoS: 000362602300009
• Keywords (in Czech): mnohonásobné kvantové jámy; Si Ge; fotoluminiscence; epitaxe, kvalita krystalů
• Keywords in English: multiple quantum wells; silicon germanium; photoluminescence; epitaxy; crystal quality
• Tags: rivok
• Tags: International impact, Reviewed

Abstract

In this work we address three-dimensional heterojunctions, demonstrating that photoluminescence from defect-free, Ge/SiGe multiple quantum well (MQW) micro-crystals grown on deeply patterned Si(001) and Si(111) substrates exhibit similar radiative intensity and analogous spectral shape.

Abstract (in Czech)

V této práci prezentujeme 3D heteropřechody ukazující, že fotoluminescence z bezdefektních Ge/SiGe mnohonásobných kvantových jam (MQW) mikrokrystalů pěstovaných na hluboce vzorkovaných Si(001) a Si(111) substrátech vykazují podobné radiační intenzity a analogický spektrální tvar.

Links

• ED1.1.00/02.0068, research and development project: Name: CEITEC - central european institute of technology
• EE2.3.20.0027, research and development project: Name: Posílení excelence vědeckých týmů v oblasti nano a mikrotechnologií
• LM2011020, research and development project: Name: CEITEC ? open access

Investor: Ministry of Education, Youth and Sports of the CR