HUMLÍČEK, Josef a Jan ŠIK. Optical functions of silicon from reflectance and ellipsometry on silicon-on-insulator and homoepitaxial samples. Journal of Applied Physics. Melville (USA): American Institute of Physics, 2015, roč. 118, č. 19, s. nestránkováno, 6 s. ISSN 0021-8979. Dostupné z: https://dx.doi.org/10.1063/1.4936126. |
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@article{1331073, author = {Humlíček, Josef and Šik, Jan}, article_location = {Melville (USA)}, article_number = {19}, doi = {http://dx.doi.org/10.1063/1.4936126}, keywords = {silicon; optical functions}, language = {eng}, issn = {0021-8979}, journal = {Journal of Applied Physics}, title = {Optical functions of silicon from reflectance and ellipsometry on silicon-on-insulator and homoepitaxial samples}, url = {http://scitation.aip.org/content/aip/journal/jap/118/19/10.1063/1.4936126}, volume = {118}, year = {2015} }
TY - JOUR ID - 1331073 AU - Humlíček, Josef - Šik, Jan PY - 2015 TI - Optical functions of silicon from reflectance and ellipsometry on silicon-on-insulator and homoepitaxial samples JF - Journal of Applied Physics VL - 118 IS - 19 SP - nestránkováno EP - nestránkováno PB - American Institute of Physics SN - 00218979 KW - silicon KW - optical functions UR - http://scitation.aip.org/content/aip/journal/jap/118/19/10.1063/1.4936126 L2 - http://scitation.aip.org/content/aip/journal/jap/118/19/10.1063/1.4936126 N2 - The optical properties of silicon have been determined from 0.2 to 6.5 eV at room temperature, using reflectance spectra of silicon-on-insulator (SOI) and ellipsometric spectra of homoepitaxial samples. Optimized Fabry-Perot-type SOI resonators exhibit high finesse even in near ultraviolet. Very high precision values of the real part of the refractive index are obtained in infrared up to a photon energy of 1.3 eV. The spectra of the extinction coefficient, based on observations of light attenuation, extend to 3.2 eV due to measurements on SOI layers as thin as 87 nm. These results allowed us to correct spectroellipsometric data on homoepitaxial samples for the presence of reduced and stabilized surface layers. ER -
HUMLÍČEK, Josef a Jan ŠIK. Optical functions of silicon from reflectance and ellipsometry on silicon-on-insulator and homoepitaxial samples. \textit{Journal of Applied Physics}. Melville (USA): American Institute of Physics, 2015, roč.~118, č.~19, s.~nestránkováno, 6 s. ISSN~0021-8979. Dostupné z: https://dx.doi.org/10.1063/1.4936126.
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