Excitonic fine structure splitting in type-II quantum dots

J 2015

Excitonic fine structure splitting in type-II quantum dots

KŘÁPEK, Vlastimil, Petr KLENOVSKÝ and Tomáš ŠIKOLA

Basic information

Original name

Excitonic fine structure splitting in type-II quantum dots

Authors

KŘÁPEK, Vlastimil (203 Czech Republic), Petr KLENOVSKÝ (203 Czech Republic, guarantor, belonging to the institution) and Tomáš ŠIKOLA (203 Czech Republic)

Edition

Physical Review B, COLLEGE PK, The American Physical Society, 2015, 1098-0121

Other information

Language

English

Type of outcome

Článek v odborném periodiku

Field of Study

10302 Condensed matter physics

Country of publisher

United States of America

Confidentiality degree

není předmětem státního či obchodního tajemství

References:

URL

Impact factor

Impact factor: 3.736 in 2014

RIV identification code

RIV/00216224:14310/15:00080412

Organization unit

Faculty of Science

DOI

http://dx.doi.org/10.1103/PhysRevB.92.195430

UT WoS

000365507900004

Keywords in English

POLARIZATION-ENTANGLED PHOTONS; WAVELENGTH LIGHT-EMISSION; STRAIN-REDUCING LAYER; OPTICAL-PROPERTIES; MU-M; GAASSB; NANOCRYSTALS; PHOTOLUMINESCENCE; LOCALIZATION; RELAXATION

Abstract

V originále

Excitonic fine structure splitting in quantum dots is closely related to the lateral shape of the wave functions. We have studied theoretically the fine structure splitting in InAs quantum dots with a type-II confinement imposed by a GaAsSb capping layer. We show that very small values of the fine structure splitting comparable with the natural linewidth of the excitonic transitions are achievable for realistic quantum dots despite the structural elongation and the piezoelectric field. For example, varying the capping layer thickness allows for a fine tuning of the splitting energy. The effect is explained by a strong sensitivity of the hole wave function to the quantum dot structure and a mutual compensation of the electron and hole anisotropies. The oscillator strength of the excitonic transitions in the studied quantum dots is comparable to those with a type-I confinement which makes the dots attractive for quantum communication technology as emitters of polarization-entangled photon pairs.

Links

CZ.1.07/2.3.00/20.0027, interní kód MU
(CEP code: EE2.3.20.0027)

Name: NANOE - Posílení excelence vědeckých týmů v oblasti nano- a mikrotechnologií (Acronym: NANOE)

Investor: Ministry of Education, Youth and Sports of the CR, Support of Excellence Research Teams in the Field of Nanotechnologies and Microtechnologies, 2.3 Human resources in research and development

ED1.1.00/02.0068, research and development project

Name: CEITEC - central european institute of technology

MUNI/A/1496/2014, interní kód MU

Name: Struktura, elektronová struktura a optická odezva pokročilých materiálů IV

Investor: Masaryk University, Category A

TH01010419, research and development project

Name: Výzkum a vývoj nových technologií výroby bipolárního tranzistoru s izolovaným hradlem (TIGBT)

Investor: Technology Agency of the Czech Republic

Citovat

KŘÁPEK, Vlastimil, Petr KLENOVSKÝ and Tomáš ŠIKOLA. Excitonic fine structure splitting in type-II quantum dots. Physical Review B. COLLEGE PK: The American Physical Society, 2015, vol. 92, No 19, p. "nestránkováno", 9 pp. ISSN 1098-0121. Available from: https://dx.doi.org/10.1103/PhysRevB.92.195430.

@article{1331176,
   author = {Křápek, Vlastimil and Klenovský, Petr and Šikola, Tomáš},
   article_location = {COLLEGE PK},
   article_number = {19},
   doi = {http://dx.doi.org/10.1103/PhysRevB.92.195430},
   keywords = {POLARIZATION-ENTANGLED PHOTONS; WAVELENGTH LIGHT-EMISSION; STRAIN-REDUCING LAYER; OPTICAL-PROPERTIES; MU-M; GAASSB; NANOCRYSTALS; PHOTOLUMINESCENCE; LOCALIZATION; RELAXATION},
   language = {eng},
   issn = {1098-0121},
   journal = {Physical Review B},
   title = {Excitonic fine structure splitting in type-II quantum dots},
   url = {http://journals.aps.org/prb/abstract/10.1103/PhysRevB.92.195430},
   volume = {92},
   year = {2015}
}

TY  - JOUR
ID  - 1331176
AU  - Křápek, Vlastimil - Klenovský, Petr - Šikola, Tomáš
PY  - 2015
TI  - Excitonic fine structure splitting in type-II quantum dots
JF  - Physical Review B
VL  - 92
IS  - 19
SP  - "nestránkováno"
EP  - "nestránkováno"
PB  - The American Physical Society
SN  - 10980121
KW  - POLARIZATION-ENTANGLED PHOTONS
KW  - WAVELENGTH LIGHT-EMISSION
KW  - STRAIN-REDUCING LAYER
KW  - OPTICAL-PROPERTIES
KW  - MU-M
KW  - GAASSB
KW  - NANOCRYSTALS
KW  - PHOTOLUMINESCENCE
KW  - LOCALIZATION
KW  - RELAXATION
UR  - http://journals.aps.org/prb/abstract/10.1103/PhysRevB.92.195430
N2  - Excitonic fine structure splitting in quantum dots is closely related to the lateral shape of the wave functions. We have studied theoretically the fine structure splitting in InAs quantum dots with a type-II confinement imposed by a GaAsSb capping layer. We show that very small values of the fine structure splitting comparable with the natural linewidth of the excitonic transitions are achievable for realistic quantum dots despite the structural elongation and the piezoelectric field. For example, varying the capping layer thickness allows for a fine tuning of the splitting energy. The effect is explained by a strong sensitivity of the hole wave function to the quantum dot structure and a mutual compensation of the electron and hole anisotropies. The oscillator strength of the excitonic transitions in the studied quantum dots is comparable to those with a type-I confinement which makes the dots attractive for quantum communication technology as emitters of polarization-entangled photon pairs.
ER  -

KŘÁPEK, Vlastimil, Petr KLENOVSKÝ and Tomáš ŠIKOLA. Excitonic fine structure splitting in type-II quantum dots. \textit{Physical Review B}. COLLEGE PK: The American Physical Society, 2015, vol.~92, No~19, p.~''nestránkováno'', 9 pp. ISSN~1098-0121. Available from: https://dx.doi.org/10.1103/PhysRevB.92.195430.

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