Structural and electronic properties of manganese-doped Bi2Te3
epitaxial layers

J 2015

Structural and electronic properties of manganese-doped Bi2Te3 epitaxial layers

RŮŽIČKA, Jiří, Ondřej CAHA, Václav HOLÝ, Hubert STEINER, Valentyn VOLOBUIEV et. al.

Základní údaje

Originální název

Structural and electronic properties of manganese-doped Bi2Te3 epitaxial layers

Název česky

strukturní a elektronové vlastnosti manganem dopovaných Bi2Te3 vrstev

Autoři

RŮŽIČKA, Jiří (203 Česká republika, domácí), Ondřej CAHA (203 Česká republika, garant, domácí), Václav HOLÝ (203 Česká republika), Hubert STEINER (40 Rakousko), Valentyn VOLOBUIEV (804 Ukrajina), Andreas NEY (804 Ukrajina), Günther BAUER (40 Rakousko), Tomáš DUCHON (203 Česká republika), Kateřina VELTRUSKÁ (203 Česká republika), I. KHALAKHAN (643 Rusko), Vladimír MATOLÍN (203 Česká republika), E. SCHWIER (276 Německo), H. IWASAWA (392 Japonsko), K. SHIMADA (392 Japonsko) a Günter SPRINGHOLZ (40 Rakousko)

Vydání

New Journal of Physics, BRISTOL, Institute of Physics, 2015, 1367-2630

Další údaje

Jazyk

angličtina

Typ výsledku

Článek v odborném periodiku

Obor

10302 Condensed matter physics

Stát vydavatele

Velká Británie a Severní Irsko

Utajení

není předmětem státního či obchodního tajemství

Impakt faktor

Impact factor: 3.570

Kód RIV

RIV/00216224:14310/15:00081613

Organizační jednotka

Přírodovědecká fakulta

DOI

http://dx.doi.org/10.1088/1367-2630/17/1/013028

UT WoS

000348759300013

Klíčová slova česky

topologické izolátory; tenké vrstvy; EXAFS; ARPES

Klíčová slova anglicky

topological insulators; thin layers; EXAFS; ARPES

Štítky

AKR, rivok

Příznaky

Mezinárodní význam, Recenzováno

Změněno: 1. 3. 2019 11:37, doc. Mgr. Ondřej Caha, Ph.D.

Anotace

ORIG CZ

V originále

We show that in manganese-doped topological insulator bismuth telluride layers, Mnatoms are incorporated predominantly as interstitials in the van der Waals gaps between the quintuple layers and not substitutionally on Bi sites within the quintuple layers. The structural properties of epitaxial layers withMnconcentration of up to 13% are studied by high-resolution x-ray diffraction, evidencing a shrinking of both the in-plane and out-of plane lattice parameters with increasing Mn content. Ferromagnetism sets in for Mn contents around 3% and the Curie temperatures rises up to 15 K for a Mn concentration of 9%. The easy magnetization axis is along the c-axis perpendicular to the (0001) epilayer plane. Angle-resolved photoemission spectroscopy reveals that the Fermi level is situated in the conduction band and no evidence for a gap opening at the topological surface state with the Dirac cone dispersion is found within the experimental resolution at temperatures close to the Curie temperature. From the detailed analysis of the extended x-ray absorption fine-structure experiments (EXAFS) performed at the MnK-edge, we demonstrate that the Mn atoms occupy interstitial positions within the van der Waals gap and are surrounded octahedrally by Te atoms of the adjacent quintuple layers.

Česky

Ukázali jsme, že v manganem dopovaném teluridu bismutu jsou manganové atomy převážně situovány v intersiticiálních polohách.

Návaznosti

ED1.1.00/02.0068, projekt VaV

Název: CEITEC - central european institute of technology

GAP204/12/0595, projekt VaV

Název: Elektronové a strukturní vlastnosti trojrozměrných topologických izolantů

Investor: Grantová agentura ČR, Elektronové a strukturní vlastnosti trojrozměrných topologických izolantů

Citovat

RŮŽIČKA, Jiří, Ondřej CAHA, Václav HOLÝ, Hubert STEINER, Valentyn VOLOBUIEV, Andreas NEY, Günther BAUER, Tomáš DUCHON, Kateřina VELTRUSKÁ, I. KHALAKHAN, Vladimír MATOLÍN, E. SCHWIER, H. IWASAWA, K. SHIMADA a Günter SPRINGHOLZ. Structural and electronic properties of manganese-doped Bi2Te3 epitaxial layers. New Journal of Physics. BRISTOL: Institute of Physics, 2015, roč. 17, January, s. "nestránkováno", 11 s. ISSN 1367-2630. Dostupné z: https://dx.doi.org/10.1088/1367-2630/17/1/013028.

@article{1336964,
   author = {Růžička, Jiří and Caha, Ondřej and Holý, Václav and Steiner, Hubert and Volobuiev, Valentyn and Ney, Andreas and Bauer, Günther and Duchon, Tomáš and Veltruská, Kateřina and Khalakhan, I. and Matolín, Vladimír and Schwier, E. and Iwasawa, H. and Shimada, K. and Springholz, Günter},
   article_location = {BRISTOL},
   article_number = {January},
   doi = {http://dx.doi.org/10.1088/1367-2630/17/1/013028},
   keywords = {topological insulators; thin layers; EXAFS; ARPES},
   language = {eng},
   issn = {1367-2630},
   journal = {New Journal of Physics},
   title = {Structural and electronic properties of manganese-doped Bi2Te3 epitaxial layers},
   volume = {17},
   year = {2015}
}

TY  - JOUR
ID  - 1336964
AU  - Růžička, Jiří - Caha, Ondřej - Holý, Václav - Steiner, Hubert - Volobuiev, Valentyn - Ney, Andreas - Bauer, Günther - Duchon, Tomáš - Veltruská, Kateřina - Khalakhan, I. - Matolín, Vladimír - Schwier, E. - Iwasawa, H. - Shimada, K. - Springholz, Günter
PY  - 2015
TI  - Structural and electronic properties of manganese-doped Bi2Te3 epitaxial layers
JF  - New Journal of Physics
VL  - 17
IS  - January
SP  - "nestránkováno"
EP  - "nestránkováno"
PB  - Institute of Physics
SN  - 13672630
KW  - topological insulators
KW  - thin layers
KW  - EXAFS
KW  - ARPES
N2  - We show that in manganese-doped topological insulator bismuth telluride layers, Mnatoms are incorporated predominantly as interstitials in the van der Waals gaps between the quintuple layers and not substitutionally on Bi sites within the quintuple layers. The structural properties of epitaxial layers withMnconcentration of up to 13% are studied by high-resolution x-ray diffraction, evidencing a shrinking of both the in-plane and out-of plane lattice parameters with increasing Mn content. Ferromagnetism sets in for Mn contents around 3% and the Curie temperatures rises up to 15 K for a Mn concentration of 9%. The easy magnetization axis is along the c-axis perpendicular to the (0001) epilayer plane. Angle-resolved photoemission spectroscopy reveals that the Fermi level is situated in the conduction band and no evidence for a gap opening at the topological surface state with the Dirac cone dispersion is found within the experimental resolution at temperatures close to the Curie temperature. From the detailed analysis of the extended x-ray absorption fine-structure experiments (EXAFS) performed at the MnK-edge, we demonstrate that the Mn atoms occupy interstitial positions within the van der Waals gap and are surrounded octahedrally by Te atoms of the adjacent quintuple layers.
ER  -

RŮŽIČKA, Jiří, Ondřej CAHA, Václav HOLÝ, Hubert STEINER, Valentyn VOLOBUIEV, Andreas NEY, Günther BAUER, Tomáš DUCHON, Kateřina VELTRUSKÁ, I. KHALAKHAN, Vladimír MATOLÍN, E. SCHWIER, H. IWASAWA, K. SHIMADA a Günter SPRINGHOLZ. Structural and electronic properties of manganese-doped Bi2Te3 epitaxial layers. \textit{New Journal of Physics}. BRISTOL: Institute of Physics, 2015, roč.~17, January, s.~''nestránkováno'', 11 s. ISSN~1367-2630. Dostupné z: https://dx.doi.org/10.1088/1367-2630/17/1/013028.

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