Structural and electronic properties of manganese-doped Bi2Te3
epitaxial layers

J 2015

Structural and electronic properties of manganese-doped Bi2Te3 epitaxial layers

RŮŽIČKA, Jiří, Ondřej CAHA, Václav HOLÝ, Hubert STEINER, Valentyn VOLOBUIEV et. al.

Basic information

Original name

Structural and electronic properties of manganese-doped Bi2Te3 epitaxial layers

Name in Czech

strukturní a elektronové vlastnosti manganem dopovaných Bi2Te3 vrstev

Authors

RŮŽIČKA, Jiří (203 Czech Republic, belonging to the institution), Ondřej CAHA (203 Czech Republic, guarantor, belonging to the institution), Václav HOLÝ (203 Czech Republic), Hubert STEINER (40 Austria), Valentyn VOLOBUIEV (804 Ukraine), Andreas NEY (804 Ukraine), Günther BAUER (40 Austria), Tomáš DUCHON (203 Czech Republic), Kateřina VELTRUSKÁ (203 Czech Republic), I. KHALAKHAN (643 Russian Federation), Vladimír MATOLÍN (203 Czech Republic), E. SCHWIER (276 Germany), H. IWASAWA (392 Japan), K. SHIMADA (392 Japan) and Günter SPRINGHOLZ (40 Austria)

Edition

New Journal of Physics, BRISTOL, Institute of Physics, 2015, 1367-2630

Other information

Language

English

Type of outcome

Článek v odborném periodiku

Field of Study

10302 Condensed matter physics

Country of publisher

United Kingdom of Great Britain and Northern Ireland

Confidentiality degree

není předmětem státního či obchodního tajemství

Impact factor

Impact factor: 3.570

RIV identification code

RIV/00216224:14310/15:00081613

Organization unit

Faculty of Science

DOI

http://dx.doi.org/10.1088/1367-2630/17/1/013028

UT WoS

000348759300013

Keywords (in Czech)

topologické izolátory; tenké vrstvy; EXAFS; ARPES

Keywords in English

topological insulators; thin layers; EXAFS; ARPES

Abstract

ORIG CZ

V originále

We show that in manganese-doped topological insulator bismuth telluride layers, Mnatoms are incorporated predominantly as interstitials in the van der Waals gaps between the quintuple layers and not substitutionally on Bi sites within the quintuple layers. The structural properties of epitaxial layers withMnconcentration of up to 13% are studied by high-resolution x-ray diffraction, evidencing a shrinking of both the in-plane and out-of plane lattice parameters with increasing Mn content. Ferromagnetism sets in for Mn contents around 3% and the Curie temperatures rises up to 15 K for a Mn concentration of 9%. The easy magnetization axis is along the c-axis perpendicular to the (0001) epilayer plane. Angle-resolved photoemission spectroscopy reveals that the Fermi level is situated in the conduction band and no evidence for a gap opening at the topological surface state with the Dirac cone dispersion is found within the experimental resolution at temperatures close to the Curie temperature. From the detailed analysis of the extended x-ray absorption fine-structure experiments (EXAFS) performed at the MnK-edge, we demonstrate that the Mn atoms occupy interstitial positions within the van der Waals gap and are surrounded octahedrally by Te atoms of the adjacent quintuple layers.

In Czech

Ukázali jsme, že v manganem dopovaném teluridu bismutu jsou manganové atomy převážně situovány v intersiticiálních polohách.

Links

ED1.1.00/02.0068, research and development project

Name: CEITEC - central european institute of technology

GAP204/12/0595, research and development project

Name: Elektronové a strukturní vlastnosti trojrozměrných topologických izolantů

Investor: Czech Science Foundation

Citovat

RŮŽIČKA, Jiří, Ondřej CAHA, Václav HOLÝ, Hubert STEINER, Valentyn VOLOBUIEV, Andreas NEY, Günther BAUER, Tomáš DUCHON, Kateřina VELTRUSKÁ, I. KHALAKHAN, Vladimír MATOLÍN, E. SCHWIER, H. IWASAWA, K. SHIMADA and Günter SPRINGHOLZ. Structural and electronic properties of manganese-doped Bi2Te3 epitaxial layers. New Journal of Physics. BRISTOL: Institute of Physics, 2015, vol. 17, January, p. "nestránkováno", 11 pp. ISSN 1367-2630. Available from: https://dx.doi.org/10.1088/1367-2630/17/1/013028.

@article{1336964,
   author = {Růžička, Jiří and Caha, Ondřej and Holý, Václav and Steiner, Hubert and Volobuiev, Valentyn and Ney, Andreas and Bauer, Günther and Duchon, Tomáš and Veltruská, Kateřina and Khalakhan, I. and Matolín, Vladimír and Schwier, E. and Iwasawa, H. and Shimada, K. and Springholz, Günter},
   article_location = {BRISTOL},
   article_number = {January},
   doi = {http://dx.doi.org/10.1088/1367-2630/17/1/013028},
   keywords = {topological insulators; thin layers; EXAFS; ARPES},
   language = {eng},
   issn = {1367-2630},
   journal = {New Journal of Physics},
   title = {Structural and electronic properties of manganese-doped Bi2Te3 epitaxial layers},
   volume = {17},
   year = {2015}
}

TY  - JOUR
ID  - 1336964
AU  - Růžička, Jiří - Caha, Ondřej - Holý, Václav - Steiner, Hubert - Volobuiev, Valentyn - Ney, Andreas - Bauer, Günther - Duchon, Tomáš - Veltruská, Kateřina - Khalakhan, I. - Matolín, Vladimír - Schwier, E. - Iwasawa, H. - Shimada, K. - Springholz, Günter
PY  - 2015
TI  - Structural and electronic properties of manganese-doped Bi2Te3 epitaxial layers
JF  - New Journal of Physics
VL  - 17
IS  - January
SP  - "nestránkováno"
EP  - "nestránkováno"
PB  - Institute of Physics
SN  - 13672630
KW  - topological insulators
KW  - thin layers
KW  - EXAFS
KW  - ARPES
N2  - We show that in manganese-doped topological insulator bismuth telluride layers, Mnatoms are incorporated predominantly as interstitials in the van der Waals gaps between the quintuple layers and not substitutionally on Bi sites within the quintuple layers. The structural properties of epitaxial layers withMnconcentration of up to 13% are studied by high-resolution x-ray diffraction, evidencing a shrinking of both the in-plane and out-of plane lattice parameters with increasing Mn content. Ferromagnetism sets in for Mn contents around 3% and the Curie temperatures rises up to 15 K for a Mn concentration of 9%. The easy magnetization axis is along the c-axis perpendicular to the (0001) epilayer plane. Angle-resolved photoemission spectroscopy reveals that the Fermi level is situated in the conduction band and no evidence for a gap opening at the topological surface state with the Dirac cone dispersion is found within the experimental resolution at temperatures close to the Curie temperature. From the detailed analysis of the extended x-ray absorption fine-structure experiments (EXAFS) performed at the MnK-edge, we demonstrate that the Mn atoms occupy interstitial positions within the van der Waals gap and are surrounded octahedrally by Te atoms of the adjacent quintuple layers.
ER  -

RŮŽIČKA, Jiří, Ondřej CAHA, Václav HOLÝ, Hubert STEINER, Valentyn VOLOBUIEV, Andreas NEY, Günther BAUER, Tomáš DUCHON, Kateřina VELTRUSKÁ, I. KHALAKHAN, Vladimír MATOLÍN, E. SCHWIER, H. IWASAWA, K. SHIMADA and Günter SPRINGHOLZ. Structural and electronic properties of manganese-doped Bi2Te3 epitaxial layers. \textit{New Journal of Physics}. BRISTOL: Institute of Physics, 2015, vol.~17, January, p.~''nestránkováno'', 11 pp. ISSN~1367-2630. Available from: https://dx.doi.org/10.1088/1367-2630/17/1/013028.

Detailed Information on Publication Record