ISA, F., M. SALVALAGLIO, YAR. DASILVA, Mojmír MEDUŇA, M. BARGET, A. JUNG, T. KREILIGER, Gisella CANO I RUIZ, R. ERNI, F. PEZZOLI, E. BONERA, P. NIEDERMANN, P. GRONING, F. MONTALENTI and Hans VON KAENEL. Highly Mismatched, Dislocation-Free SiGe/Si Heterostructures. ADVANCED MATERIALS. WEINHEIM: WILEY-V C H VERLAG GMBH, 2016, vol. 28, No 5, p. 884-888. ISSN 0935-9648. Available from: https://dx.doi.org/10.1002/adma.201504029.
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Basic information
Original name Highly Mismatched, Dislocation-Free SiGe/Si Heterostructures
Name in Czech Vysoce nepřizpůsobené bezdislokační SiGe/Si heterostruktury
Authors ISA, F. (380 Italy), M. SALVALAGLIO (380 Italy), YAR. DASILVA (756 Switzerland), Mojmír MEDUŇA (203 Czech Republic, guarantor, belonging to the institution), M. BARGET (380 Italy), A. JUNG (756 Switzerland), T. KREILIGER (756 Switzerland), Gisella CANO I RUIZ (380 Italy), R. ERNI (756 Switzerland), F. PEZZOLI (380 Italy), E. BONERA (380 Italy), P. NIEDERMANN (756 Switzerland), P. GRONING (756 Switzerland), F. MONTALENTI (380 Italy) and Hans VON KAENEL (756 Switzerland).
Edition ADVANCED MATERIALS, WEINHEIM, WILEY-V C H VERLAG GMBH, 2016, 0935-9648.
Other information
Original language English
Type of outcome Article in a journal
Field of Study 10302 Condensed matter physics
Country of publisher Germany
Confidentiality degree is not subject to a state or trade secret
WWW URL
Impact factor Impact factor: 19.791
RIV identification code RIV/00216224:14740/16:00089505
Organization unit Central European Institute of Technology
Doi http://dx.doi.org/10.1002/adma.201504029
UT WoS 000369978800010
Keywords (in Czech) heteroepitaxe; heterostruktury; relaxace pnutí; SiGe; vzorkovaný substrát
Keywords in English heteroepitaxy; heterostructures; strain relaxation; SiGe; substrate patterning
Tags rivok
Changed by Changed by: Mgr. Mojmír Meduňa, Ph.D., učo 7898. Changed: 13/3/2018 10:02.
Abstract
Defect-free mismatched heterostructures on Si substrates are produced by an innovative strategy. The strain relaxation is engineered to occur elastically rather than plastically by combining suitable substrate patterning and vertical crystal growth with compositional grading.
Abstract (in Czech)
Bezdislokační nepřizpůsobené heterostruktury na Si substrítech jsou vyrobeny novou strategií. Relaxace pnutí je navrženo tak že je elastické spíše než plastické, kombinací vhodného vzorkovaného substrátu a vertikálním růstem krystaslů s gradovaným složením.
Links
ED1.1.00/02.0068, research and development projectName: CEITEC - central european institute of technology
EE2.3.20.0027, research and development projectName: Posílení excelence vědeckých týmů v oblasti nano a mikrotechnologií
LM2011020, research and development projectName: CEITEC ? open access
Investor: Ministry of Education, Youth and Sports of the CR
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